MOSFET SMD Type MOS Field Effect Transistor 2SK2159 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 Features +0.1 2.50-0.1 Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. @VGS = 1.5 V, ID = 0.1 A +0.1 2.60-0.1 RDS(on) = 0.7 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 14 V ID 2.0 A Idp * 4.0 A Drain current Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 14V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Min Typ Max Unit 1.0 A 10 VGS(off) VDS=10V,ID=1mA 0.5 0.9 1.1 VGS=1.5V,ID=0.1A VDS=10V,ID=1.0A 0.4 0.55 0.7 RDS(on) VGS=2.5V,ID=1.0A 0.27 0.5 VGS=4.0V,ID=1.0A 0.22 0.3 Yfs Input capacitance Ciss Output capacitance Coss VDS=10V,VGS=0,f=1MHZ A V S 319 pF 109 pF Reverse transfer capacitance Crss 22 pF Turn-on delay time td(on) 38 ns 128 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=1.0A,VGS(on)=3V,RL=25 ,RG=10 ,VDD=25V 237 ns 130 ns Marking Marking NW www.kexin.com.cn 1