KEXIN 2SJ204

MOSFET
SMD Type
MOS Fied Effect Transistor
2SJ204
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
RDS(on)=13
1
2
+0.1
0.95-0.1
+0.1
1.9-0.1
MAX.@VGS=-10V,ID=-10mA
+0.05
0.1-0.01
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
RDS(on)=8
MAX.@VGS=-4.0V,ID=-10mA
0.55
Has low on-state resistance
+0.1
1.3-0.1
+0.1
2.4-0.1
Directly driven by Ics having a 5V poer supply.
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage VGS=0
VDSS
-30
V
VDS=0
VGSS
20
V
Drain current (DC)
ID
200
mA
Drain current(pulse) *
ID
400
mA
Gate to source voltage
Power dissipation
PD
200
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 ms; d
mW
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=-30V,VGS=0
Gate leakage current
IGSS
VGS=
Gate cut-off voltage
Drain to source on-state resistance
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Max
Unit
-10
A
1.0
-1.4
-1.9
-2.4
VGS=-4V,ID=-10mA
8.5
13
VGS=-10V,ID=-10mA
5
8
A
VDS=-5.0V,ID=-10mA
20
A
V
ms
27
pF
27
pF
Crss
6
pF
td(on)
120
ns
tr
240
ns
135
ns
210
ns
td(off)
Fall time
Typ
20V,VDS=0
VGS(off) VDS=-5.0V,ID=-1
Forward transfer admittance
Min
tf
VDS=-10V,VGS=0,f=1MHZ
VGS(on)=-4V,RG=10
RL=1.5
,VDD=-5V,ID=-0.3A
Marking
Marking
H15
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