MOSFET SMD Type MOS Fied Effect Transistor 2SJ204 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(on)=13 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MAX.@VGS=-10V,ID=-10mA +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 RDS(on)=8 MAX.@VGS=-4.0V,ID=-10mA 0.55 Has low on-state resistance +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply. 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -30 V VDS=0 VGSS 20 V Drain current (DC) ID 200 mA Drain current(pulse) * ID 400 mA Gate to source voltage Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 ms; d mW 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-30V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Max Unit -10 A 1.0 -1.4 -1.9 -2.4 VGS=-4V,ID=-10mA 8.5 13 VGS=-10V,ID=-10mA 5 8 A VDS=-5.0V,ID=-10mA 20 A V ms 27 pF 27 pF Crss 6 pF td(on) 120 ns tr 240 ns 135 ns 210 ns td(off) Fall time Typ 20V,VDS=0 VGS(off) VDS=-5.0V,ID=-1 Forward transfer admittance Min tf VDS=-10V,VGS=0,f=1MHZ VGS(on)=-4V,RG=10 RL=1.5 ,VDD=-5V,ID=-0.3A Marking Marking H15 www.kexin.com.cn 1