KEXIN 2SJ492

MOSFET
SMD Type
MOS Field Effect Transistor
2SJ492
TO-263
+0.1
1.27-0.1
RDS(on)2 = 185 m
(MAX.) (VGS =-4 V, ID =-10 A)
Low Ciss: Ciss = 1210 pF (TYP.)
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
Built-in gate protection diode
+0.2
4.57-0.2
5.60
(MAX.) (VGS = -10 V, ID = -10 A)
+0.1
1.27-0.1
+0.2
2.54-0.2
+0.1
0.81-0.1
2.54
5.08
+0.2
15.25-0.2
RDS(on)1 = 100 m
+0.2
8.7-0.2
Low on-state resistance
Unit: mm
+0.2
2.54-0.2
Features
+0.2
0.4-0.2
+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
-60
V
Gate to source voltage (AC)
VGSS
Gate to source voltage (DC) *1
VGSS
Drain current (DC)
ID
Drain current(pulse) *2
Power dissipation
ID
20
-20
20
80
V
V
A
A
TA=25
PD
1.5
W
TC=25
PD
70
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Rth(ch-C)
1.79
/W
Rth(ch-A)
83.3
/W
Channel to Case
Channel to Ambient
*1 f = 20 kHz, Duty Cycle
* 2 PW
10
s; d
10% (+Side)
1%.
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1
MOSFET
SMD Type
2SJ492
Electrical Characteristics Ta = 25
Parameter
Testconditons
Drain to source breakdown voltage
VDSS
ID=-10mA,VGS=0
Gate to source breakdown voltage
VGSS
IG =
Drain cut-off current
IDSS
VDS=-60V,VGS=0
Gate leakage current
IGSS
VGS=
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
-10
20V,VDS=0
10
12
Ciss
Reverse transfer capacitance
Crss
Turn-on delay time
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V
5.0
RDS(on)
Unit
V
10
VDS=-10V,ID=-10A
Yfs
Max
-20
-1.5
Coss
Fall time
A ,VDS=0
Typ
-1.0
Input capacitance
Turn-off delay time
200
Min
VGS(off) VDS=-10V,ID=-1mA
Output capacitance
Rise time
2
Symbol
A
A
-2.0
V
S
VGS=-10V,ID=-10A
70
100
m
VGS=-4.0V,ID=-10A
120
185
m
1210
pF
520
pF
180
pF
td(on)
16
ns
tr
140
ns
90
ns
80
ns
td(off)
tf
VDS=-10V,VGS=0,f=1MHZ
VDD=-30V,VGS(on)=-10V,ID=--10A
,RG=10