IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK1954 Features TO-252 Low on-resistance RDS(on)=0.65 (VGS=10V,ID=2A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 High Avalanche Capability Ratings +0.15 0.50-0.15 +0.2 9.70-0.2 Built-in G-S Gate Protection Diode 3.80 Low Ciss Ciss=300pF typ 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 180 V Gate to source voltage VGSS 20 V Drain current ID 4.0 A Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=180V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to Source Cutoff Voltage Forward transfer admittance Drain to source on-state resistance Min VGS(off) VDS=10V,ID=1mA 2.0 VDS=10V,ID=2.0A 0.5 Yfs RDS(on) VGS=10V,ID=2.0A Input capacitance Ciss Output capacitance Coss VDS=10V,VGS=0,f=1MHZ Typ Max Unit 100 A 10 A 4.0 V S 0.52 0.65 300 pF 170 pF Reverse transfer capacitance Crss 50 pF Turn-on delay time td(on) 9 ns 12 ns 28 ns 12 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=2A,VGS(on)=10V,RL=50 www.kexin.com.cn 1