IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 RDS(on)2 = 78 mÙ MAX. (VGS = 4.0 V, ID = 10 A) Low C iss: C iss = 760 pF TYP. +0.15 0.50-0.15 RDS(on)1 = 44 mÙ MAX. (VGS = 10 V, ID = 10 A) 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 20 A Idp * 50 A Drain current Power dissipation TA=25 1.5 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 30 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 3.5 7.0 15 Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Max 10 10 4.5 Unit A A V Yfs VDS=10V,ID=10A S RDS(on)1 VGS=10V,ID=10A 35 44 mÙ RDS(on)2 VGS=4.0V,ID=10A 54 78 mÙ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time ton 13 ns Rise time tr 170 ns Turn-off delay time toff 43 ns Fall time VDS=10V,VGS=0,f=1MHZ ID=10A,VGS(on)=10V,RG=0 ,VDD=30V 760 pF 150 pF 71 pF tf 34 ns Total Gate Charge QG 17 nC Gate to Source Charge QGS 3.0 nC Gate to Drain Charge QGD 4.7 nC VDD = 48V VGS = 10 V ID =10A www.kexin.com.cn 1