KEXIN 2SK3794

IC
MOSFET
SMD Type
MOS Field Effect Transistor
2SK3794
TO-252
Features
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Low On-state resistance
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Built-in gate protection diode
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.2
9.70-0.2
RDS(on)2 = 78 mÙ MAX. (VGS = 4.0 V, ID = 10 A)
Low C iss: C iss = 760 pF TYP.
+0.15
0.50-0.15
RDS(on)1 = 44 mÙ MAX. (VGS = 10 V, ID = 10 A)
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
20
A
Idp *
50
A
Drain current
Power dissipation
TA=25
1.5
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
30
TC=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
3.5
7.0
15
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Max
10
10
4.5
Unit
A
A
V
Yfs
VDS=10V,ID=10A
S
RDS(on)1
VGS=10V,ID=10A
35
44
mÙ
RDS(on)2
VGS=4.0V,ID=10A
54
78
mÙ
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
ton
13
ns
Rise time
tr
170
ns
Turn-off delay time
toff
43
ns
Fall time
VDS=10V,VGS=0,f=1MHZ
ID=10A,VGS(on)=10V,RG=0 ,VDD=30V
760
pF
150
pF
71
pF
tf
34
ns
Total Gate Charge
QG
17
nC
Gate to Source Charge
QGS
3.0
nC
Gate to Drain Charge
QGD
4.7
nC
VDD = 48V
VGS = 10 V
ID =10A
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