IC MOSFET SMD Type MOS Field Effect Transistor 2SK3386 TO-252 MAX. (VGS = 4.0 V, ID = 17A) Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(on)2 = 36 m +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 17A) +0.15 0.50-0.15 RDS(on)1 = 21 m +0.2 9.70-0.2 Low on-resistance Unit: mm +0.1 2.30-0.1 +0.25 2.65-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 V ID 30 A Idp * 100 A Drain current Power dissipation TC=25 36 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 10 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Typ Max Unit 10 A 10 2.0 A 2.5 V Yfs VDS=10V,ID=17A RDS(on)1 VGS=10V,ID=17A 17 21 m RDS(on)2 VGS=4.0V,ID=17A 25 36 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=10V,VGS=0,f=1MHZ 19 S 2100 pF 340 pF 170 pF Turn-on delay time ton 32 ns Rise time tr 310 ns Turn-off delay time toff 98 ns Fall time ID=17A,VGS(on)=10V,RG=10 ,VDD=30V tf 100 ns Total Gate Charge QG 39 nC Gate to Source Charge QGS 7.0 nC Gate to Drain Charge QGD 12 nC ID =34A, VDD = 48 V, VGS = 10 V www.kexin.com.cn 1