KEXIN 2SK3386

IC
MOSFET
SMD Type
MOS Field Effect Transistor
2SK3386
TO-252
MAX. (VGS = 4.0 V, ID = 17A)
Low Ciss : Ciss = 2100 pF TYP.
+0.1
0.80-0.1
Built-in gate protection diode
2.3
+0.1
0.60-0.1
0.127
max
3.80
RDS(on)2 = 36 m
+0.8
0.50-0.7
+0.15
5.55-0.15
MAX. (VGS = 10 V, ID = 17A)
+0.15
0.50-0.15
RDS(on)1 = 21 m
+0.2
9.70-0.2
Low on-resistance
Unit: mm
+0.1
2.30-0.1
+0.25
2.65-0.1
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.28
1.50-0.1
Features
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
30
A
Idp *
100
A
Drain current
Power dissipation
TC=25
36
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.0
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
10
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Typ
Max
Unit
10
A
10
2.0
A
2.5
V
Yfs
VDS=10V,ID=17A
RDS(on)1
VGS=10V,ID=17A
17
21
m
RDS(on)2
VGS=4.0V,ID=17A
25
36
m
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS=10V,VGS=0,f=1MHZ
19
S
2100
pF
340
pF
170
pF
Turn-on delay time
ton
32
ns
Rise time
tr
310
ns
Turn-off delay time
toff
98
ns
Fall time
ID=17A,VGS(on)=10V,RG=10 ,VDD=30V
tf
100
ns
Total Gate Charge
QG
39
nC
Gate to Source Charge
QGS
7.0
nC
Gate to Drain Charge
QGD
12
nC
ID =34A, VDD = 48 V, VGS = 10 V
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