IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 15 A) +0.25 2.65-0.1 RDS(on)2 =25 m +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 18A) +0.15 0.50-0.15 RDS(on)1 =14 m +0.2 9.70-0.2 Low on-state resistance 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 30 V Gate to source voltage VGSS Drain current Power dissipation TC=25 20 V ID 36 A Idp * 140 A 29 PD TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Symbol IDSS VDS=30V,VGS=0 Max Unit 10 A VGS= 20V,VDS=0 VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=18A 5.5 RDS(on)1 VGS=10V,ID=18A 11 14 m RDS(on)2 VGS=4.5V,ID=15A 17 25 m Ciss Coss Reverse transfer capacitance Turn-on delay time 10 2.5 11 A V S 930 pF 250 pF Crss 160 pF ton 9.4 ns Rise time tr Turn-off delay time toff VDS=10V,VGS=0,f=1MHZ ID=18A,VGS(on)=15V,RG=10 ,VDD=10V tf QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode Forward Voltage Note Typ IGSS Input capacitance Total Gate Charge Min VGS(off) Output capacitance Fall time Testconditons VDD = 24V VGS = 10 V ID =36A 8.6 ns 34 ns 11 ns 22 nC 3.6 nC 7.4 nC VF(S-D) IF = 36 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 36 A, VGS = 0 V 24 ns Reverse Recovery Charge Qrr di/dt = 100 A/ ìs 15 nC www.kexin.com.cn 1