KEXIN 2SK2133

IC
MOSFET
SMD Type
MOS Field Effect Power Transistor
2SK2133
TO-263
+0.1
1.27 -0.1
Features
Low on-resistance
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.2
15.25 -0.2
0.1max
+0.1
1.27-0.1
+0.2
5.28 -0.2
High avalanche capabil
+0.2
2.54 -0.2
+0.2
8.7 -0.2
Low Ciss Ciss=1090 pF TYP.
5.60
RDS(on)=0.21 [email protected]=10V,ID=8.0A
+0.1
5.08-0.1
1 Gate
2 Drain
+0.2
0.4-0.2
3 Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
250
V
Gate to source voltage
VGSS
30
V
ID
16
A
Idp *
64
A
Drain current
Power dissipation TA=25
PD
TC=25
1.5
W
75
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Symbol
Testconditons
IDSS
VDS=250V,VGS=0
IGSS
VGS= 30V,VDS=0
Min
2.0
VDS=10V,ID=8.0A
4.0
RDS(on) VGS=10V,ID=8.0A
Input capacitance
Ciss
Output capacitance
Coss
VDS=10V,VGS=0,f=1MHZ
Max
Unit
100
A
10
VGS(off) VDS=10V,ID=1mA
Yfs
Typ
4.0
A
V
S
0.2
0.26
1090
pF
420
pF
Reverse transfer capacitance
Crss
80
pF
Turn-on delay time
td(on)
20
ns
40
ns
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
ID=8.0A,VGS(on)=10V,RL=18.75
,RG=10 ,VDD=150V
60
ns
20
ns
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