MOSFET SMD Type MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.0ÙMAX. @VGS=4.0V,ID=0.5A +0.1 0.80-0.1 1 Has low on-state resistance +0.1 4.00-0.1 Directly driven by Ics having a 5V power source. 1 Gate 1. Source Base 1. +0.1 0.40-0.1 RDS(on)=0.70ÙMAX. @VGS=10V,ID=0.5A +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 30 V Gate to source voltage VGSS 20 V ID 1.0 A Idp * 2.0 A Drain current Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.0 Yfs VDS=10V,ID=0.5A 0.4 RDS(on) VGS=4V,ID=0.5A 0.6 1.0 Ù RDS(on) VGS=10V,ID=0.5A 0.4 0.7 Ù Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 10 10 1.6 2.5 A A V S 130 pF 70 pF Crss 30 pF Turn-on delay time ton 12 ns Rise time tr 44 ns Turn-off delay time toff 310 ns Fall time tf 160 ns VDS=5.0V,VGS=0,f=1MHZ ID=0.5A,VGS(on)=10V,RG=10 ,VDD=25V,RL=50Ù www.kexin.com.cn 1