KEXIN 2SK2158

MOSFET
SMD Type
MOS Field Effect Transistor
2SK2158
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
consider driving current.
0.55
Because of high input impedance, there is no need to
+0.1
1.3-0.1
+0.1
2.4-0.1
Capable of drive gate with 1.5 V
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Bias resistance can be omitted, enabling reduction in total
+0.05
0.1-0.01
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
number of parts.
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
50
V
Gate to source voltage
VGSS
7.0
V
ID
0.1
A
Idp *
0.2
A
PD
200
Drain current
Power dissipation
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
mW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
IDSS
VDS=50V,VGS=0
IGSS
VGS= 7.0V,VDS=0
VDS=3V,ID=10mA
20
Yfs
Max
Unit
1.0
A
0.7
1.1
VGS=1.5V,ID=1.0mA
32
50
16
20
VGS=4.0V,ID=1.0mA
12
15
Ciss
Reverse transfer capacitance
Crss
Turn-on delay time
A
V
ms
RDS(on) VGS=2.5V,ID=10mA
Coss
6
pF
8
pF
1
pF
td(on)
9
ns
tr
48
ns
21
ns
31
ns
td(off)
Fall time
Typ
3.0
0.5
Input capacitance
Turn-off delay time
Min
VGS(off) VDS=3V,ID=10 A
Output capacitance
Rise time
Testconditons
tf
VDS=3V,VGS=0,f=1MHZ
ID=20mA,VGS(on)=3V,RL=150 ,RG=10
,VDD=3V
Marking
Marking
G23
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