KEXIN 2SK1960

IC
MOSFET
SMD Type
MOS Field Effect Transistor
2SK1960
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
Features
+0.1
-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Low ON resistance
+0.1
4.00-0.1
Gate can be driven by 1.5V
RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
1
RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A
1 Gate
1. Source
Base
1.
0.40
+0.1
-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
16
V
Gate to source voltage
VGSS
7
V
ID
3.0
A
IDP
6.0
A
Drain current
Power dissipation
PD
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Unit
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=16V,VGS=0
Gate leakage current
IGSS
VGS= 7V,VDS=0
Gate to Source Cutoff Voltage
Forward transfer admittance
Drain to source on-state resistance
Min
Typ
Max
Unit
100
A
3.0
0.8
1.1
VGS=1.5V,ID=0.1A
0.35
0.8
RDS(on) VGS=2.5V,ID=1.5A
0.17
0.3
VGS=4.0V,ID=1.5A
0.12
0.2
VGS(off) VDS=3V,ID=1mA
0.5
VDS=3V,ID=1.5A
2.0
Yfs
Input capacitance
Ciss
Output capacitance
Coss
VDS=3V,VGS=0,f=1MHZ
A
V
S
370
pF
320
pF
Reverse transfer capacitance
Crss
115
pF
Turn-on delay time
td(on)
70
ns
200
ns
150
ns
200
ns
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
ID=1.5A,VGS(on)=3V,RL=2
,VDD=3V,RG=10
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