IC MOSFET SMD Type MOS Field Effect Transistor 2SK1960 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance +0.1 4.00-0.1 Gate can be driven by 1.5V RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 1 Gate 1. Source Base 1. 0.40 +0.1 -0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 16 V Gate to source voltage VGSS 7 V ID 3.0 A IDP 6.0 A Drain current Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Unit W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=16V,VGS=0 Gate leakage current IGSS VGS= 7V,VDS=0 Gate to Source Cutoff Voltage Forward transfer admittance Drain to source on-state resistance Min Typ Max Unit 100 A 3.0 0.8 1.1 VGS=1.5V,ID=0.1A 0.35 0.8 RDS(on) VGS=2.5V,ID=1.5A 0.17 0.3 VGS=4.0V,ID=1.5A 0.12 0.2 VGS(off) VDS=3V,ID=1mA 0.5 VDS=3V,ID=1.5A 2.0 Yfs Input capacitance Ciss Output capacitance Coss VDS=3V,VGS=0,f=1MHZ A V S 370 pF 320 pF Reverse transfer capacitance Crss 115 pF Turn-on delay time td(on) 70 ns 200 ns 150 ns 200 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=1.5A,VGS(on)=3V,RL=2 ,VDD=3V,RG=10 www.kexin.com.cn 1