IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2059S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 High speed switching Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 Suitable for Switching regulator, DC - DC converter +0.15 0.50-0.15 No Secondary Breakdown 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 3 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=500V,VGS=0 Gate leakage current IGSS VGS= 25V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Min 2.0 VDS=10V,ID=10A 1.2 Yfs Ciss VDS=10V,VGS=0,f=1MHZ Max Unit 100 A 10 VGS(off) VDS=10V,ID=1mA RDS(on) VGS=10V,ID=1A Typ 3.0 2.0 3.8 A V S 5.0 295 pF Output capacitance Coss 70 pF Reverse transfer capacitance Crss 12 pF Turn-on delay time td(on) 8 ns Rise time Turn-off delay time Fall time tr td(off) tf ID=1A,VGS(on)=10V,RL=30 25 ns 65 ns 30 ns www.kexin.com.cn 1