IC MOSFET SMD Type MOS Field Effect Transistor 2SK2109 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.3A +0.1 4.00-0.1 Low on-resistance High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 1 Gate 1. Source Base 1. 0.40 +0.1 -0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 V ID 0.5 A Idp 1.0 A Drain current Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS Gate leakage current IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA 0.8 VDS=10V,ID=0.3A 0.4 Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time VDS=60V,VGS=0 Max 1.0 10 1.5 2.0 VGS=4.0V,ID=0.3A 0.55 1.0 VGS=10V,ID=0.3A 0.41 0.8 Unit A nA V S 111 pF 55 pF Crss 19 pF td(on) 2.2 ns tr 1.5 ns 35 ns 19 ns td(off) Fall time Typ tf VDS=10V,VGS=0,f=1MHZ ID=0.3A,VGS(on)=10V,RL=83 ,RG=10 ,VDD=25V Marking Marking NS www.kexin.com.cn 1