MOSFET SMD Type N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 MAX. (VGS = 10 V, ID = 18 A) 5.08 +0.2 2.54-0.2 RDS(on)1 = 12 m +0.2 8.7-0.2 Low on-state resistance 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V ID 35 A 140 A Drain current Idp * Power dissipation Ta=25 PD 1.5 W 40 Tc=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source surrender voltage VDSS ID=1mA,VGS=0 Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons Min Max 100 Unit V 10 IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.0 Yfs VDS=10V,ID=12A 9.0 RDS(on) Typ A 10 2.5 A V S VGS=10V,ID=18A 8.5 12 m VGS=4.5V,ID=18A 12 19 m Ciss VDS=10V,VGS=0,f=1MHZ 1300 pF Output capacitance Coss 570 pF Reverse transfer capacitance Crss 300 pF Turn-on delay time ton 70 ns Rise time tr Turn-off delay time toff Fall time tf ID=18A,VGS(on)=10V,RG=10 ,VDD=10V 1220 ns 100 ns 180 ns www.kexin.com.cn 1