MOSFET SMD Type MOS Field Effect Transistor 2SK3299 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS(on) = 0.75 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings +0.2 2.54-0.2 Surface mount package available +0.2 15.25-0.2 30 V +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 Gate voltage rating +0.2 8.7-0.2 QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 10 A Idp * 40 A Drain current Power dissipation TA=25 PD 1.5 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 75 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=600V,VGS=0 Min IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=5.0A 3.2 RDS(on) VGS=10V,ID=5.0A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Typ Max Unit 100 A 100 3.5 A V S 0.68 0.75 1580 pF 280 pF Crss 25 pF ton 27 ns 17 ns VDS=10V,VGS=0,f=1MHZ ID=5.0A,VGS(on)=10V,RG=10 ,VDD=150V 66 ns 24 ns www.kexin.com.cn 1