IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Low C iss: C iss = 5450 pF TYP. +0.15 0.50-0.15 +0.2 9.70-0.2 RDS(on)2 = 10.5 mÙ MAX. (VGS = 4.5 V, ID = 30 A) 3.80 RDS(on)1 = 8.7mÙ MAX. (VGS = 10 V, ID = 30 A) 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS 20 V ID 60 A 240 A Drain current Idp * Power dissipation TA=25 1.0 PD V W 84 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Drain cut-off current IDSS VDS=60V,VGS=0 10 Gate leakage current IGSS VGS= 20V,VDS=0 100 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=30A 21 44 RDS(on)1 VGS=10V,ID=30A RDS(on)2 VGS=4.5V,ID=30A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance A nA V S 7.0 8.7 mÙ 7.9 10.5 mÙ 5450 pF 550 pF Crss 350 pF ton 23 ns 8.5 ns Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge 2.5 Unit QG Gate to Source Charge QGS Gate to Drain Charge QGD VDS=10V,VGS=0,f=1MHZ ID=30A,VGS(on)=10V,RG=0 ,VDD=30V VDD = 48V VGS = 10 V ID =60A 85 ns 7.7 ns 95 nC 17 nC 26 nC www.kexin.com.cn 1