Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 High avalanche resistance +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V Gate-source surrender voltage VGSS 30 V Drain current ID 50 A Peak drain current IDP 200 A Avalanche energy capability EAS 2 000 mJ Power dissipation Ta = 25 PD Power dissipation 3 W 100 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3637 Electrical Characteristics Ta = 25 Parameter Testconditons Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 IDR = 50 A, VGS = 0 Diode forward voltage VDSF Gate threshold voltage Vth VDS = 25 V, ID = 10 mA Drain-source cutoff current IDSS VDS = 160 V, VGS = 0 IGSS VGS = Gate-source cutoff currentt Drain-source on resistance Min Forward transfer admittance Yfs Ciss Short-circuit output capacitance Coss Typ 2 VDS = 25 V, VGS = 0, f = 1 MHz 29 15 Unit V 30 V, VDS = 0 VDS = 25 V, ID = 25 A Max 200 RDS(on) VGS = 10 V, ID = 25 A Short-circuit forward transfer capacitance -1.5 V 4 V 100 ìA 1 ìA 40 mÙ 30 S 4 550 pF 750 pF Reverse transfer capacitance Crss 75 pF Turn-on delay time td(on) 50 ns 125 ns 390 ns 140 ns ns Rise time Turn-off delay time tr td(off) VDD = 100 V, ID = 25 A,RL = 4 Ù, VGS = 10 V Fall time tf Reverse recovery time trr L = 230 ìH, VDD = 100 V 210 Reverse recovery charge Qrr IDR = 25 A, di /dt = 100 A/ ìs 820 nC Total gate charge Qg 85 nC Gate-source charge Qgs 30 nC Gate-drain charge 2 Symbol Qgd VDD = 100 V, ID = 25 A,VGS = 10 V 12 nC Channel-case heat resistance Rth(ch-c) 1.25 /W Channel-atmosphere heat resistance Rth(ch-a) 41.6 /W www.kexin.com.cn