IC MOSFET SMD Type MOS Field Effect Transistor 2SK3483 TO-252 MAX. (VGS = 4.5 V, ID = 14A) +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 RDS(on)2 = 59m Low Ciss: Ciss = 2300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 14A) +0.15 0.50-0.15 RDS(on)1 = 52m +0.2 9.70-0.2 Super low on-state resistance: Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 100 V Gate to source voltage VGSS 20 V ID 28 A Idp * 60 A Drain current Power dissipation TC=25 40 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Symbol Testconditons IDSS VDS=100V,VGS=0 Min Typ Max Unit 10 A IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=14A 9.0 18 RDS(on)1 VGS=10V,ID=14A 41 52 m RDS(on)2 VGS=4.5V,ID=14A 45 59 m Ciss VDS=10V,VGS=0,f=1MHZ 10 2.5 A V S 2300 pF Output capacitance Coss 230 pF Reverse transfer capacitance Crss 120 pF Turn-on delay time ton 12 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID=14A,VGS(on)=10V,RG=0 ,VDD=50V ID =28A, VDD =80V, VGS = 10 V 9 ns 53 ns 5 ns 49 nC 7 nC 13 nC www.kexin.com.cn 1