MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS(off): VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max +0.1 1.27-0.1 MAX. (VGS = 10 V, ID = 5 A) +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 RDS(on) = 0.83 +0.2 5.28-0.2 Low on-state resistance: 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 10 A 35 A Drain current Idp * Power dissipation TA=25 1.5 PD W 100 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Drain cut-off current IDSS VDS=600V,VGS=0 10 Gate leakage current IGSS VGS= 30V,VDS=0 100 VGS(off) Gate cut off voltage Forward transfer admittance Drain to source on-state resistance VDS=10V,ID=1mA 3.8 4.8 Yfs VDS=10V,ID=5A 2.5 4.6 RDS(on) VGS=10V,ID=5A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time toff Fall time 0.68 5.8 Unit A nA V S 0.83 1460 pF 250 pF 6.5 pF ton 26 ns tr 8.5 ns 30 ns VDS=10V,VGS=0,f=1MHZ ID=5A,VGS(on)=10V,RG=0 ,VDD=150V tf 5.2 ns Total Gate Charge QG 25 nC Gate to Source Charge QGS Gate to Drain Charge QGD VDD = 450V VGS = 10 V ID =10A 12 nC 9 nC www.kexin.com.cn 1