MOSFET SMD Type MOS Field Effect Transistor 2SK3458 TO-263 Unit: mm +0.1 1.27-0.1 Features Low gate charge +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 10 V, ID = 3.0 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 2.2 Avalanche capability ratings Surface mount package available +0.2 2.54-0.2 +0.2 15.25-0.2 Low on-state resistance +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 30 V +0.2 8.7-0.2 Gate voltage rating 5.60 QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 800 V Gate to source voltage VGSS 30 V ID 6.0 A Idp * 24 A Drain current Power dissipation TC=25 PD 100 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=800V,VGS=0 Min IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=3.0A 2.0 RDS(on)1 VGS=10V,ID=3.0A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Typ Max Unit 100 A 100 3.5 A V S 1.8 2.2 1220 pF 170 pF Crss 16 pF ton 17 ns 7 ns Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD VDS=10V,VGS=0,f=1MHZ ID=3.0A,VGS(on)=10V,RG=10 ,VDD=150V ID =6.0A, VDD =450V, VGS = 10 V 43 ns 11 ns 25 nC 6 nC 10 nC www.kexin.com.cn 1