Transistors IC SMD Type NPN General Purpose Transistors BCX20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 General Purpose Transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCES 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 800 A Collector dissipation Pc 310 W Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit Collector-emitter breakdown voltage BVCEO IC = 10mA, IB = 0 25 V Collector-emitter breakdown voltage BVCES IC = 100ìA, VBE = 0 30 V Emitter-base breakdown voltage BVEBO IE = 10ìA, IC = 0 5 V Collector cut-off current ICBO VCE = 20V, VBE = 0 100 nA Emitter-base cut-off current IEBO VBE =5V, IC = 0 10 nA hFE DC current gain VCE = 1V, IC = 100mA 100 VCE = 1V, IC = 300mA 70 VCE = 1V, IC = 500mA 40 600 Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 0.62 V Base-emitter saturation voltage VBE(on) VCE = 1A, IB = 500mA 1.2 V Marking Marking U2 www.kexin.com.cn 1