Transistors IC SMD Type Silicon PNP Epitaxial 2SA1617 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Collector cutoff current ICBO VCB = -30V, IE=0 -0.5 ìA Emitter cutoff current IEBO VEB = -2V, IC=0 -0.5 ìA hFE VCE = -12V , IC = -2mA DC current gain VCE(sat) IC = -10mA , IB = -1mA Collector-emitter saturation voltage Base-emitter voltage VBE VCE = -12V , IC = -2mA 100 320 -0.2 V -0.8 V hFE Classification VI Marking Rank B C hFE 100 200 160 320 www.kexin.com.cn 1