KEXIN 2SC4852

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4852
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Small ON resistance.
0.55
Low collector-to-emitter saturation voltage.
+0.1
1.3-0.1
+0.1
2.4-0.1
Small output capacitance.
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector current (pulse)
ICP
200
mA
Base current
IB
20
mA
Collector dissipation
PC
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Collector cutoff current
ICBO
VCB = 15V, IE=0
Emitter cutoff current
IEBO
VEB = 4V, IC=0
DC current gain
hFE
VCE = 2V , IC = 5mA
fT
VCE = 5V , IC = 10mA
240
VCB = 10V , f = 1.0MHz
1.4
Gain bandwidth product
Output capacitance
Cob
800
Max
Unit
0.1
ìA
0.1
ìA
3200
MHz
pF
Collector-emitter saturation voltage
VCE(sat) IC = 10mA , IB = 1mA
14
30
mV
Base-emitter saturation voltage
VBE(sat) IC = 10mV , IB = 1mA
0.74
1.1
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
15
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
On resistance
Ron
IB = 3mA, f = 1.0MHz
0.9
Ù
Marking
Marking
YT
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