Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4852 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Small ON resistance. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Small output capacitance. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector current (pulse) ICP 200 mA Base current IB 20 mA Collector dissipation PC 250 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Collector cutoff current ICBO VCB = 15V, IE=0 Emitter cutoff current IEBO VEB = 4V, IC=0 DC current gain hFE VCE = 2V , IC = 5mA fT VCE = 5V , IC = 10mA 240 VCB = 10V , f = 1.0MHz 1.4 Gain bandwidth product Output capacitance Cob 800 Max Unit 0.1 ìA 0.1 ìA 3200 MHz pF Collector-emitter saturation voltage VCE(sat) IC = 10mA , IB = 1mA 14 30 mV Base-emitter saturation voltage VBE(sat) IC = 10mV , IB = 1mA 0.74 1.1 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 25 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 15 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V On resistance Ron IB = 3mA, f = 1.0MHz 0.9 Ù Marking Marking YT www.kexin.com.cn 1