KEXIN FMMT549

Transistors
IC
SMD Type
Medium Power Transistor
FMMT549
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Low equivalent on-resistance.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-35
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICM
-2
A
Collector current
IC
-1
A
Base current
IB
-200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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1
Transistors
IC
SMD Type
FMMT549
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-35
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
V
Collector cutoff current
ICBO
VCB=-30V
-0.1
ìA
Emitter cut-off current
IEBO
VEB=-4V
-0.1
ìA
-0.25 -0.5
-0.50 -0.75
V
IC=-1A,IB=-100mA
IC=-2A,IB=-200mA
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
VBE(sat) IC=-1A,IB=-100mA
-0.9
-1.25
V
Base-emitter voltage *
VBE(ON) IC=-1A,VCE=-2V
-0.85
-1
V
hFE
DC current gain *
Current-gain-bandwidth product
Output capacitance
Switching times
* Pulse test: tp
300 ìs; d
Marking
Marking
2
Testconditons
549
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0.02.
fT
IC=-50mA, VCE=-2V
70
200
IC=-1A, VCE=-2V
80
130
I =-2A, V =-2V
40
80
IC=-500mA,VCE=-2V
100
160
IC=-100mA,VCE=-5V,f=100MHz
100
300
MHz
Cobo
VCB=-10V,f=1MHz
25
pF
ton
VCB=-10V, f=1MHz
50
ns
toff
IC=-500mA,VCC=-10V,IB1=IB2=-50mA
300
ns