KEXIN FMMT614

Transistors
SMD Type
Power Darlington Transistor
FMMT614
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
hFE up to 5k at IC= 500mA
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Fast switching
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low VCE(sat) at High IC
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
500
mA
Peak collector current
ICM
2
A
Power dissipation
Ptot
500
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
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1
Transistors
SMD Type
FMMT614
Electrical Characteristics Ta = 25
Min
Typ
Collector-base breakdown voltage
Parameter
V(BR)CBO IC=10ìA
Symbol
120
300
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
100
130
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA
10
Collector cutoff current
ICBO
VCB=100V,IE=0
Collector cutoff current
ICES
VCE=100V,IE=0
Emitter cut-off current
IEBO
VEB=8V
Max
10
0.02
Unit
V
10
nA
10
ìA
100
nA
Collector-emitter saturation voltage *
IC=500mA,IB=5mA
VCE(sat)
IC=100mA,IB=0.1mA
0.9
0.78
1.0
0.9
V
Base-emitter saturation voltage *
VBE(sat) IC=500mA,IB=5mA
1.7
1.9
V
Base-emitter voltage *
VBE(ON) IC=500mA,VCE=5V
1.5
1.8
V
hFE
DC current gain *
Output capacitance
Switching times
* Pulse test: tp = 300 ìs; d
Marking
Marking
2
Testconditons
614
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0.02.
IC=100mA,VCE=5V
15K
IC=500mA,VCE=5V
5K
Cobo
VCB=10V,f=100MHz
6
pF
ton
IC=100ìA, VS=10V
0.7
ìs
toff
IB=0.1mA
2.5
ìs