Transistors SMD Type Power Darlington Transistor FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Very high hFE +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 12 V IC 900 mA Collector current Peak collector current ICM 5 A Power dissipation Ptot 625 mW Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FMMT634 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 120 170 Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 100 115 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 12 16 V V ICBO VCB=80V 10 nA Collector Emitter Cut-Off Current ICES VCE=80V 100 nA Emitter cut-off current IEBO VEB=7V 10 nA Collector cutoff current IC=100mA, IB=1mA IC=250mA, IB=1mA VCE(sat) IC=500mA, IB=5mA IC=900mA, IB=5mA IC=900mA, IB=5mA IC=1A, IB=5mA 0.67 0.72 0.75 0.82 0.68 0.85 0.75 0.80 0.85 0.93 Base-emitter saturation voltage * VBE(sat) IC=1A,IB=5mA 1.5 1.65 V Base-emitter voltage * VBE(ON) IC=1A,VCE=5V 1.33 1.5 V Collector-emitter saturation voltage * hFE IC=100mA, VCE=5V 20K 60K IC=1A, VCE=5V 15K 14K IC=2A, VCE=5V 5K IC=5A, VCE=5V 0.96 50K IC=10mA, VCE=5V Static Forward Current Transfer Ratio* V 600 24K IC=1A, VCE=2V Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp = 300 ìs; d Marking Marking 2 634 www.kexin.com.cn 0.02. fT IC=50mA,VCE=10V,f=100MHz 140 MHz Cobo VCB=10V,f=1MHz ton IC=500mA, VCC=20V 290 ns toff IB= 1mA 2.4 ìs 9 20 pF