Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT749 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 Low saturation voltage. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Excellent hFE specified up to 6A . 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -8 A Peak pulse current IC -3 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT749 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=-100ìA -35 Breakdown Voltages V(BR)CEO IC=-10mA -25 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 V Collector Cut-Off Currents ICBO VCB=-30V VCB=-30V,Ta = 100 Collector Cut-Off Currents IEBO VEB=4V V -0.1 -10 ìA -0.1 ìA Saturation Voltages * IC=-1A, IB=-100mA VCE(sat) IC=-3A, IB=-300mA -0.12 -0.40 -0.3 -0.6 V Saturation Voltages * VBE(sat) IC=-1A, IB=-100mA -0.9 -1.25 V Base-emitter ON voltage * VBE(on) IC=-1A, VCE=-2V -0.8 -1.0 V Static Forward Current Transfer Ratio Transitional frequency hFE fT IC=-50mA, VCE=-2V* 70 200 IC=-1A, VCE=-2V* 100 200 IC=-2A, VCE=-2V* 75 150 IC=-6A, VCE=-2V* 15 50 IC=-100mA, VCE=-5V, f=100MHz 100 160 300 MHz Output capacitance Cobo VCB=-10V, f=1MHz 55 Turn-on time t(on) IC=-500mA, VCC=-10V 40 ns Turn-off time t(off) IB1=IB2=-50mA 450 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT749 www.kexin.com.cn 100 pF