Transistors IC SMD Type General Purpose Transistor 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF (Typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 60 V Collector-emitter breakdown voltage VCEO IC=1mA 50 V Emitter-base breakdown voltage VEBO IE=50ìA 7 V Collector cutoff current ICBO VCB=60V 0.1 A Emitter cutoff current IEBO VEB=7V 0.1 A DC current Gain hFE VCE=6V, IC=1mA 120 560 VCE(sat) IC/IB=50mA/5mA Collector-emitter saturation voltage Collector Output Capacitance VCE=12V, IE=0A, f=1MHz Cob Transition frequency VCE=12V, IE=-2mA, f=100MHz fT 2 180 0.4 V 3.5 pF MHz hFE Classification Marking BQ BR BS Rank Q R S hFE 120 270 180 390 270 560 www.kexin.com.cn 1 Transistors IC SMD Type 2SC2412K Typlcal Characteristics Fig.1 Grounded Emitter Propagation Characteristics Fig.4 DC Current Gain vs. Collector Current Fig.7 Collector-Emitter Saturation Voltage vs. Collector Current 2 www.kexin.com.cn Fig.2 Grounded Emitter Output Characteristics Fig.5 DC Current Gain vs. Collector Current Fig.3 Grounded Emitter Output Characteristics Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current Fig.8 Collector-Emitter Saturation Voltage vs. Collector Current Fig.9 Gain Bandwidth Product vs. Emitter Current Transistors IC SMD Type 2SC2412K Fig.10 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Fig.11 Base-Collector Time Constant vs. Emitter Current www.kexin.com.cn 3