Transistors SMD Type General purpose transistor 2SC4617 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Features +0.01 0.1-0.01 2 0.55 Low Cob : Cob=2.0pF (Typ.) 1 +0.15 1.6-0.15 +0.05 0.8-0.05 NPN silicon transistor 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.15 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 60 V Collector-emitter breakdown voltage VCEO IC=1mA 50 V 7 Emitter-base breakdown voltage VEBO IE=50ìA Collector cutoff current ICBO VCB=60V 0.1 A Emitter cutoff current IEBO VEB=7V 0.1 A hFE VCE=6V, IC=1mA DC current gain V 120 560 VCE(sat) IC/IB=50mA/5mA Collector-emitter saturation voltage Output capacitance Cob Transition frequency fT VCE=12V, IE=0A, f=1MHz VCE=12V, IE=-2mA, f=100MHz 2 180 0.4 V 3.5 pF MHz hFE Classification Marking BQ BR BS Rank Q R S hFE 120 270 180 390 270 560 www.kexin.com.cn 1 Transistors SMD Type 2SC4617 Typlcal Characteristics Fig.1 Grounded Emitter Propagation Characteristics Fig.4 DC Current Gain vs. Collector Current Fig.7 Collector Emitter Saturation Voltage vs. Collector Current 2 www.kexin.com.cn Fig.2 Grounded Emitter Output Characteristics Fig.5 DC Current Gain vs. Collector Current Fig.8 Collector Emitter Saturation Voltage vs. Collector Current Fig.3 Grounded Emitter Output Characteristics Fig. 6 Collector Emitter Saturation Voltage vs. Collector Current Fig.9 Gain Bandwidth Product vs. Emitter Current Transistors SMD Type 2SC4617 Fig.11 Base-Collector Time Constant Fig.10 Collector Output Capacitance vs. vs. Emitter Current Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage www.kexin.com.cn 3