KEXIN KC847T

Transistors
SMD Type
NPN General Purpose Transistors
KC847T(BC847T)
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
2
1
+0.15
1.6-0.15
Low voltage (max. 45 V).
+0.05
0.8-0.05
Low current (max. 100 mA)
+0.01
0.1-0.01
0.55
Features
0.35
3
+0.25
0.3-0.05
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
100
mA
Peak collector current
ICM
200
mA
power dissipation
PD
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
collector cut-off current
emitter cut-off current
IEBO
Max
Unit
IE = 0; VCB = 30 V
Testconditons
Min
15
nA
IE = 0; VCB = 30 V; Tj = 150
5
A
IC = 0; VEB = 5 V
100
KC847AT
DC current gain
KC847BT
hFE
IC = 2 mA; VCE = 5 V
KC847CT
collector-emitter saturation voltage
VCEsat
Typ
110
220
200
450
420
800
nA
IC = 10 mA; IB = 0.5 mA
200
mV
IC = 100 mA; IB = 5 mA; *
400
mV
IC = 2 mA; VCE = 5 V
700
mV
IC = 10 mA; VCE = 5 V
770
mV
Cc
IE = ie = 0; VCB = 10 V; f = 1 MHz
1.5
pF
Ce
IC = ic = 0; VEB = 500 mV; f = 1 MHz
noise figure
F
IC = 200 A; VCE = 5 V; RS = 2 k
kHz; B = 200 Hz
transition frequency
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
base-emitter voltage
VBE
collector capacitance
emitter capacitance
* Pulse test: tp
300 ms;
580
11
;f = 1
pF
10
100
dB
MHz
0.02.
Marking
NO.
KC847AT
KC847BT
KC847CT
Marking
1E
1F
1G
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