Transistors IC SMD Type N-Channel 20-V (D-S) MOSFET KI1400DL SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 0.525 Features +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 )* TA=25 -TA=85 ID Pulsed drain current IDM 5 secs Steady State Unit 20 V 12 V 1.6 1.0 1.7 1.2 A 5 A Continuous source current (diode conduction) * IS 0.8 O.8 A TA=25 TA=85 PD 0.625 0.400 0.568 0.295 W Power dissipation * -- Operating junction and storage temperature range -55 to +150 Tj,Tstg * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 165 200 180 220 105 130 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1400DL Electrical Characteristics Ta = 25 Parameter Symbol Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) Typ Max 0.6 VDS = VGS, ID = -250 A VDS = 0 V, VGS = Min VDS = 16 V, VGS = 0 V 1 VDS =16 V, VGS = 0 V, TJ = 85 5 2 VDS = 5 V, VGS = 4.5 V 0.123 0.150 VGS = 2.5V, ID =1.3A 0.195 0.235 gfs VDS = 10 V, ID = 1.7 A 5 Diode forward voltage VSD IS = 0.8 A, VGS = 0 V 0.78 1.1 2.1 4.0 Total gate charge * Qg Qgs Gate-drain charge * Qgd 0.4 td(on) 10 17 VDD = 10V , RL = 20 , ID =1A , VGEN =4.5V , RG = 6 30 50 14 25 tf 8 15 trr IF = 0.8 A, di/dt = 100 A/ 30 50 tr Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle Marking Marking ND www.kexin.com.cn 2%. s A S Gate-source charge * td(off) nA A VGS = 4.5 V, ID = 1.7 A VDS =10V ,VGS = 4.5 V , ID= 1.7A Unit V 100 12 V Forward transconductance Turn-on time 2 Testconditons V nC 0.3 ns