Transistors IC SMD Type P-Channel 1.8-V (G-S) MOSFET KI2315BDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) * TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current * IDM -3.85 -3.0 -3.0 -2.45 A -12 A Continuous Source Current (diode conduction) *2 IS -1.0 -0.62 A Power Dissipation * TA=25 -------------------------------------------------TA=70 PD 1.19 0.76 0.75 0.48 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 * Surface Mounted on FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Symbol Maximum Junction-to-Ambient *1 RthJA Maximum Junction-to-Ambient *2 Maximum Junction-to-Foot (Drain) Steady State Steady State * 1. Surface Mounted on FR4 Board, t RthJF Typical Maximum 85 105 130 166 60 75 Unit /W 5 sec. * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2315BDS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) rDS(on) Drain-Source On-State Resistance * A VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = -5 V, VGS = -4.5 V -6 VDS -5 V, VGS = -2.5 V -3 0.040 0.050 VGS = -2.5 V, ID = -3.4 A 0.05 VGS = -1.8V, ID = -2.7 A 0.071 0.100 Total Gate Charge Qg Ciss S -1.2 nC 1.1 2.3 715 VDS = -6V ,VGS = 0 , f = 1 MHz pF 275 Coss Reverse Transfer Capacitance Crss 200 td(on) 15 20 35 50 50 70 50 75 tr Turn-Off Time tf * Pulse test: PW 300 ìs duty cycle Marking Marking M5 www.kexin.com.cn 2%. V 15 Output Capacitance td(off) A 0.065 7 8 VDS = -6V ,VGS = -4.5 V , ID= -3.85 A nA A VGS = -4.5 V, ID = -3.85 A IS = -1.6 A, VGS = 0 V Input Capacitance -0.9 100 VDS Unit V -0.45 -10 VDS = -5 V, ID = -3.85 A Qgd -12 VDS = -12 V, VGS = 0 V, TJ = 55 gfs Gate-Drain Charge Max -1 VSD Qgs Typ VDS = -12 V, VGS = 0 V Forward Transconductance * Gate-Source Charge Min 8V Diode Forward Voltage * Turn-On Time 2 Testconditons VDD = -6V , RL = 6Ù , ID = -1A , VGEN =- 4.5V , RG = 6Ù ns