IC IC SMD Type P-Channel 12-V (D-S) MOSFET KI4453DY Features TrenchFET Power MOSFETS Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 TA = 25 )* ID -14 IS TA = 25 Maximum Power Dissipation * PD TA = 70 Operating Junction and Storage Temperature Range -10 -8 A -1.36 A -50 IDM Continuous Source Current * V -11.5 TA = 70 Pulsed Drain Current Unit -2.7 3.0 1.5 1.9 0.95 W -55 to 150 TJ, Tstg * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot(Drain) Steady State RthJF Typical Maximum 33 42 70 84 16 21 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4453DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS VDS = 0 V, VGS = Min Typ -0.4 A 8V Max Unit -0.9 V 100 nA VDS = -12 V, VGS = 0 V -1 A VDS =-20 V, VGS = 0 V, TJ =70 -10 A On-State Drain Current* ID(on) VDS =- 5 V, VGS =- 4.5 V VGS = -4.5 V, ID = -14A 0.0051 Drain-Source On-State Resistance rDS(on) VGS = -2.5 V, ID = -13A 0.0062 0.00775 VGS = -1.8V, ID = -12A 0.0082 0.01025 -30 A 0.0065 Forward Transconductance * gfs VDS = -6 V, ID = -14 A 80 Schottky Diode Forward Voltage * VSD IS = -2.7A, VGS = 0 V -0.6 -1.1 V Total Gate Charge Qg 110 165 nC S Gate-Source Charge Qgs 15 nC Gate-Drain Charge Qgd 27.5 nC Turn-On Delay Time td(on) 110 170 ns VDD = -6 V, RL = 6 235 350 ns ID = -1 A, VGEN = -4.5 V, RG = 6 410 620 ns 285 430 ns 180 270 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time trr Gate Resistance Rg www.kexin.com.cn VDS = -6 V, VGS = -5 V, ID = -14A tf Source-Drain Reverse Recovery Time * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = -600 300 s, duty cycle IF = -2.1A, di/dt = 100 A/ s 3.6 2%.