IC IC SMD Type Dual N-Channel 30-V (D-S) MOSFET KI4330DY Features TrenchFET Power MOSFETS 100 % Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current IS TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range TJ, Tstg Parameter Symbol Maximum Junction-to-Ambient* t 10 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Steady State 30 Unit V 20 8.7 6.6 7.0 5.3 A 1.7 0.9 A 2.0 1.1 1.3 0.7 30 IDM Continuous Source Current (Diode Conduction) * Maximum Power Dissipation 10 secs W -55 to 150 Typical Maximum 45 62.5 85 110 26 35 /W * Surface Mounted on 1" x 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4330DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current * ID(on) Drain-Source On-State Resistance* rDS(on) VDS = 0 V, VGS = Min Typ 1 20 V Max Unit 3 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 5 VDS 30 5 V, VGS = 10 V VGS = 10 V, ID = 8.7 A 0.013 0.0165 VGS = 4.5 V, ID = 7.5 A 0.018 0.022 Forward Transconductance* gfs VDS = 15 V, ID = 8.7 A 28 VSD IS = 1.7 A, VGS = 0 V 0.8 Total Gate Charge Qg S 1.2 13 V nC Gate-Source Charge Qgs 7.1 nC Gate-Drain Charge Qgd 3.5 nC Gate Resistance Rg 1 1.7 Turn-On Delay Time VDS = 15 V, VGS = 4.5 V, ID = 8.7 A A A Schottky Diode Forward Voltage* td(on) Rise Time tr Turn-Off Delay Time td(off) 10 15 ns VDD = 15 V, RL = 15 Ù 10 15 ns ID = 1 A, VGEN = 10 V, RG = 6 Ù 40 60 ns Fall Time tf 12 20 ns Source-Drain Reverse Recovery Time trr 45 70 ns * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = 250 ìA www.kexin.com.cn 300 s, duty cycle 2 %. IF = 1.7 A, di/dt = 100 A/ s