KEXIN KI4330DY

IC
IC
SMD Type
Dual N-Channel 30-V (D-S) MOSFET
KI4330DY
Features
TrenchFET Power MOSFETS
100 % Rg Tested
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 70
Pulsed Drain Current
IS
TA = 25
PD
TA = 70
Operating Junction and Storage Temperature Range
TJ, Tstg
Parameter
Symbol
Maximum Junction-to-Ambient*
t
10 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
Steady State
30
Unit
V
20
8.7
6.6
7.0
5.3
A
1.7
0.9
A
2.0
1.1
1.3
0.7
30
IDM
Continuous Source Current (Diode Conduction)
*
Maximum Power Dissipation
10 secs
W
-55 to 150
Typical
Maximum
45
62.5
85
110
26
35
/W
* Surface Mounted on 1" x 1" FR4 Board.
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1
IC
IC
SMD Type
KI4330DY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current *
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = 0 V, VGS =
Min
Typ
1
20 V
Max
Unit
3
V
100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55
5
VDS
30
5 V, VGS = 10 V
VGS = 10 V, ID = 8.7 A
0.013
0.0165
VGS = 4.5 V, ID = 7.5 A
0.018
0.022
Forward Transconductance*
gfs
VDS = 15 V, ID = 8.7 A
28
VSD
IS = 1.7 A, VGS = 0 V
0.8
Total Gate Charge
Qg
S
1.2
13
V
nC
Gate-Source Charge
Qgs
7.1
nC
Gate-Drain Charge
Qgd
3.5
nC
Gate Resistance
Rg
1
1.7
Turn-On Delay Time
VDS = 15 V, VGS = 4.5 V, ID = 8.7 A
A
A
Schottky Diode Forward Voltage*
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
10
15
ns
VDD = 15 V, RL = 15 Ù
10
15
ns
ID = 1 A, VGEN = 10 V, RG = 6 Ù
40
60
ns
Fall Time
tf
12
20
ns
Source-Drain Reverse Recovery Time
trr
45
70
ns
* Pulse test; pulse width
2
Testconditons
VDS = VGS, ID = 250 ìA
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300
s, duty cycle
2 %.
IF = 1.7 A, di/dt = 100 A/
s