IC IC SMD Type Dual N-Channel 2.5-V (G-S) MOSFET KI5904DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 ) TA = 25 ID TA = 85 5secs 20 4.2 3.1 IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range 2.2 A 10 IDM Continuous Source Current (Diode Conduction)* Unit V 12 3.0 Pulsed Drain Current Maximum Power Dissipation * Steady State 1.8 0.9 2.1 1.1 1.1 0.6 W -55 to 150 TJ, Tstg 260 Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 50 60 90 110 30 40 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5904DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ Max 0.6 A 12 V 100 VDS = 16V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 85 5 VDS 10 5 V, VGS = 4.5 V A VGS = 4.5 V, ID = 3.1 A 0.065 0.075 0.143 VGS = 2.5V, ID = 2.3A 0.115 VDS = 10 V, ID = 3.1 A 8 Schottky Diode Forward Voltage* VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 4 7.5 VDS = 10 V, VGS = 4.5V, ID = 3.1 A 0.6 S Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Turn-On Delay Time td(on) 12 18 tr 35 55 19 30 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width www.kexin.com.cn 300 s,duty cycle 2% nA A gfs Turn-Off Delay Time Unit V Forward Transconductanceb Rise Time 2 Testconditons VDD=10V,RL=10 ,ID=1A,VGEN=10V,RG=6 IF = 0.9 A, di/dt = 100 A/ s V nC 9 15 40 80 ns ns