TYSEMI KPA1758

IC
IC
MOSFET
SMD Type
Product specification
KPA1758
Features
Dual MOS FET chips in small package
2.5 V gate drive type low on-state resistance
RDS(on)1 = 30 m
(MAX.) (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 m
(MAX.) (VGS = 2.5 V, ID = 3.0 A)
1 : Source 1
Low Ciss : Ciss = 1100 pF (TYP.)
2 : Gate 1
Built-in G-S protection diode
7, 8 : Drain 1
3 : Source 2
Small and surface mount package
4 : Gate 2
5, 6 : Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
12.0
V
Drain Current (DC)
ID(DC)
6.0
A
ID(pulse)
Drain Current (Pulse) *1
24
A
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 unit) *2
PT
2.0
W
Channel Temperature
Tch
150
Tstg
-55 to + 150
Storage Temperature
*1 PW
10
s, Duty cycle
1%
*2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
IC
MOSFET
SMD Type
Product specification
KPA1758
Electrical Characteristics Ta = 25
Parameter
Drain to Source On-state Resistance
Symbol
Testconditons
RDS(on)1
VGS = 4.5 V, ID = 3.5 A
Min
Typ
Max
20
30
m
m
RDS(on)2
VGS = 2.5 V, ID = 3.5 A
25
40
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1.0 mA
0.5
0.8
1.5
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 3.5 A
5.0
13
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0
Gate to Source Leakage Current
IGSS
VGS =
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
Total Gate Charge
QG
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15
V,RG = 10
tf
Gate to Source Charge
Body Diode forward Voltage
VDS = 10 V, VGS = 0, f = 1 MHz
VF(S-D)
ID = 6.0 A, VDD = 24 V, VGS = 4.0 V
IF = 6.0 A, VGS = 0
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V
S
10
12.0 V, VDS = 0
Unit
10
A
A
1100
pF
370
pF
170
pF
50
ns
190
ns
550
ns
490
ns
15.0
nC
2.0
nC
6.5
nC
0.8
V
4008-318-123
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