IC
IC
SMD Type
HEXFET Power MOSFET
KRF7338
Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Unit
V
VDS
12
-12
Continuous Drain Current,VGS@10V , Ta = 25
ID
6.3
-3.0
Continuous Drain Current ,VGS@10V , Ta = 70
ID
5.2
-2.5
Pulsed Drain Current *1
IDM
26
Drain-Source Voltage
Power Dissipation
@Ta= 25
*3
Power Dissipation
@Ta= 70
*3
-13
2.0
PD
W
1.3
16
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
A
12 *4
mV/
8.0
V
-55 to + 150
Maximum Junction-to-Ambient *3
R
JA
62.5
Junction-to-Drain Lead
R
JL
20
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width
400 s; duty cycle
2%.
*3 Surface mounted on 1 in square Cu board.
*4 The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
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IC
IC
SMD Type
KRF7338
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Testconditons
Symbol
N-Ch
12
VGS = 0V, ID = -250 A
P-Ch
-12
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.01
TJ
ID = -1mA,Reference to 25
P-Ch
-0.01
RDS(on)
VGS = 3.0V, ID = 2.0A*1
VGS = -4.5V, ID = -2.9A*1
VGS = -2.7V, ID = -1.5A*1
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
gfs
IDSS
IGSS
Qg
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Fall Time
Input Capacitance
2
VGS(th)
Gate-to-Source Charge
Rise Time
tr
td(off)
Ciss
Coss
Reverse Transfer Capacitance
Crss
Max
V/
0.034
N-Ch
0.060
0.150
P-Ch
0.200
N-Ch
0.6
1.5
VDS = VGS, ID = -250 A
P-Ch
-0.40
-1.0
VDS =6V, ID = 6.0A*1
N-Ch
9.2
VDS = -6.0V, ID = -1.5A*1
P-Ch
3.5
VDS = 9.6V, VGS = 0V
N-Ch
20
P-Ch
-1.0
VDS = 9.6V, VGS = 0V, TJ = 55
N-Ch
50
-25
VDS = -9.6V, VGS = 0V, TJ = 55
P-Ch
VGS =
12V
N-Ch
100
VGS =
8V
P-Ch
100
ID =6.0A,VDS = 6.0V,VGS =4.5V
N-Ch
8.6
P-Ch
6.6
N-Ch
1.9
P-Channel
P-Ch
1.3
ID = -2.9A,VDS = -9.6V,VGS = -4.5V
N-Ch
3.9
P-Ch
1.6
N-Channel
N-Ch
6.0
VDD = 6V,ID = 1.0A,RG = 6.0
P-Ch
9.6
VGS = 4.5V
N-Ch
7.6
P-Channel
P-Ch
13
VDD = -28V,ID = -1.0A,RG = 6.0
N-Ch
26
VGS = -4.5V
P-Ch
27
N-Channel
VGS = 0V,VDS = 9.0V,f = 1.0MHz
V
S
VDS = -9.6V, VGS = 0V
N-Channel
Unit
V
VDS = VGS, ID = 250 A
tf
Output Capacitance
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Typ
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 4.5V, ID = 6.0A*1
Static Drain-to-Source On-Resistance
Min
N-Ch
34
P-Ch
25
N-Ch
640
P-Ch
490
N-Ch
340
P-Channel
P-Ch
80
VGS = 0V,VDS = -9.0V,f = 1.0MHz
N-Ch
110
P-Ch
58
A
nA
nC
ns
pF
IC
IC
SMD Type
KRF7338
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
400 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
6.3
P-Ch
-3.0
N-Ch
26
P-Ch
-13
TJ = 25 , IS = 1.7A, VGS = 0V*1
N-Ch
1.3
TJ = 25 , IS = -2.9A, VGS = 0V*1
P-Ch
-1.2
N-Channel
N-Ch
51
76
P-Ch
37
56
N-Ch
43
64
P-Ch
20
30
TJ = 25 , IF =1.7A,di/dt = 100A/
s*1
P-Channel
TJ=25 , IF=-2.9A,di/dt=-100A/
s*1
Unit
A
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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