Transistors IC IC SMD Type Product specification KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25 ID 6.5 -4.9 Continuous Drain Current *5 Ta = 70 ID 5.2 -3.9 Pulsed Drain Current IDM 30 -30 IS 2.5 -2.5 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 *4 Power Dissipation @Ta= 70 *4 2.0 PD EAS 82 Avalanche Current IAR 4.0 Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Maximum Junction-to-Ambient *4 R 140 mJ -2.8 A -5 V/ ns 0.20 mJ 5.0 20 V -55 to + 150 TJ, TSTG Junction and Storage Temperature Range W 1.3 Single Pulse Avalanche Energy A 62.5 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.0A, di/dt -2.8A, di/dt 74A/ s, VDD 150A/ s, VDD V(BR)DSS, TJ 150 V(BR)DSS, TJ 150 *3 N-Channel Starting TJ = 25 , L = 10mH RG = 25 , IAS = 4.0A. P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.8A. *4 Surface mounted on FR-4 board, t http://www.twtysemi.com 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KRF7319 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol 30 VGS = 0V, ID = -250 A P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.022 TJ ID = -1mA,Reference to 25 P-Ch 0.022 V(BR)DSS RDS(on) VGS = 4.5V, ID = 4.7A*1 VGS = -10V, ID = -4.9A*1 VGS = -4.5V, ID = -3.6A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Input Capacitance tr td(off) Ciss Coss Reverse Transfer Capacitance Crss Max V/ 0.023 0.029 N-Ch 0.032 0.046 0.042 0.058 P-Ch 0.076 0.098 N-Ch 1.0 VDS = VGS, ID = -250 A P-Ch -1.0 VDS =15V, ID = 5.8A*1 N-Ch 14 VDS = -15V, ID = -4.9A*1 P-Ch 7.7 VDS = 24V, VGS = 0V N-Ch 1.0 VDS = -24V, VGS = 0V P-Ch -1.0 VDS = 24V, VGS = 0V, TJ = 55 N-Ch 25 VDS = -24V, VGS = 0V, TJ = 55 P-Ch -25 VGS = 20V V S N-Ch 100 P-Ch 100 N-Channel N-Ch 22 33 ID =5.8A,VDS = 15V,VGS =10V P-Ch 23 34 N-Ch 2.6 3.9 P-Channel P-Ch 3.8 5.7 ID = -4.9A,VDS = -15V,VGS = -10V N-Ch 6.4 9.6 P-Ch 5.9 8.9 N-Channel N-Ch 8.1 12 VDD = 15V,ID = 1.0A,RG = 6.0 P-Ch 13 19 RD = 15 N-Ch 8.9 13 P-Channel P-Ch 13 20 VDD = -28V,ID = -1.0A,RG = 6.0 N-Ch 26 39 P-Ch 34 51 N-Ch 17 26 48 RD = 15 N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Ch 32 N-Ch 650 P-Ch 710 N-Ch 320 P-Channel P-Ch 380 VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch 130 P-Ch 180 [email protected] Unit V VDS = VGS, ID = 250 A tf Output Capacitance http://www.twtysemi.com Typ N-Ch VGS = 10V, ID = 5.8A*1 Static Drain-to-Source On-Resistance Min VGS = 0V, ID = 250 A 4008-318-123 A nA nC ns pF 2 of 3 IC Transistors IC SMD Type Product specification KRF7319 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Body Diode) ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr 300 s; duty cycle Min IS Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 2.5 P-Ch -2.5 N-Ch 30 P-Ch -30 TJ = 25 , IS = 1.7A, VGS = 0V*1 N-Ch 0.78 1.0 TJ = 25 , IS = -1.7A, VGS = 0V*1 P-Ch -0.78 -1.0 N-Channel N-Ch 45 68 P-Ch 44 66 N-Ch 58 87 P-Ch 42 63 TJ = 25 , IF =1.7A,di/dt = 100A/ s*1 P-Channel TJ=25 ,IF=-1.7A,di/dt=-100A/ s*1 Unit A V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3