Transistors IC IC SMD Type Product specification KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage N-Channel P-Channel Unit V VDS 20 -20 Continuous Drain Current VGS Ta = 25 ID 2.4 -1.7 Continuous Drain Current VGS Ta = 70 ID 1.9 -1.4 Pulsed Drain Current *1 IDM 21 Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 -14 1.25 PD W 0.8 10 Linear Derating Factor Gate-to-Source Voltage VGS Gate-to-Source Voltage Single Pulse tp<10 S VGSM Peak Diode Recovery dv/dt *2 R V 16 dv/dt Maximum Junction-to-Ambient*3 mW/ 12 V 5.0 -5.0 V/ ns -55 to + 150 TJ, TSTG Junction and Storage Temperature Range A 100 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 1.7A, di/dt -1.2A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150 50A/ s, VDD V(BR)DSS, TJ 150 *3 Surface mounted on FR-4 board, t http://www.twtysemi.com 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification Electrical Characteristics TJ = 25 Parameter Testconditons Symbol Drain-to-Source Breakdown Voltage 20 VGS = 0V, ID = -250 A P-Ch -20 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.041 TJ ID = -1mA,Reference to 25 P-Ch 0.012 VGS = 4.5V, ID = 1.7A*1 Static Drain-to-Source On-Resistance RDS(on) VGS = 2.7V, ID = 0.85A*1 VGS = -4.5V, ID = -1.2A*1 VGS = -2.7V, ID = -0.6A*1 VGS(th) Gate Threshold Voltage Forward Transconductance gfs Drain-to-Source Leakage Current IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Continuous Source Current Pulsed Source Current Body Diode) Body Diode) *2 http://www.twtysemi.com V/ 0.085 0.14 N-Ch 0.120 0.20 P-Ch 0.17 0.27 0.28 0.40 0.7 VDS = VGS, ID = -250 A P-Ch -0.7 VDS =10V, ID = 0.85A*1 N-Ch 2.6 VDS = -10V, ID = -0.6A*1 P-Ch 1.3 VDS = 16V, VGS = 0V N-Ch 1.0 VDS = -16V, VGS = 0V P-Ch -1.0 VDS = 16V, VGS = 0V, TJ = 125 N-Ch 25 P-Ch -25 VGS = 12V V S N-Ch 100 P-Ch 100 N-Channel N-Ch 5.3 8.0 ID =1.7A,VDS = 16V,VGS =4.5V *1 P-Ch 5.4 8.2 N-Ch 0.84 1.3 P-Channel P-Ch 0.96 1.4 ID = -1.2A,VDS = -16V,VGS = -4.5V *1 N-Ch 2.2 3.3 P-Ch 2.4 3.6 N-Channel N-Ch 5.7 VDD = 10V,ID = 1.7A,RG = 6.0 P-Ch 9.1 RD = 5.7 N-Ch 24 P-Channel P-Ch 35 VDD = -10V,ID = -1.2A,RG = 6.0 N-Ch 15 P-Ch 38 *1 RD = 8.3 1*1 N-Ch 16 P-Ch 43 N-Channel N-Ch 260 VGS = 0V,VDS = 15V,f = 1.0MHz *1 P-Ch 240 N-Ch 130 P-Channel P-Ch 130 VGS = 0V,VDS = -15V,f = 1.0MHz *1 N-Ch 61 P-Ch 64 IS ISM [email protected] Unit V N-Ch tf Input Capacitance Max VDS = VGS, ID = 250 A VDS = -16V, VGS = 0V, TJ = 125 Gate-to-Source Forward Leakage Typ N-Ch V(BR)DSS Breakdown Voltage Temp. Coefficient Min VGS = 0V, ID = 250 A nA nC ns pF N-Ch 1.25 P-Ch -1.25 N-Ch 19 P-Ch -14 4008-318-123 A A 2 of 3 IC Transistors IC SMD Type Product specification KRF7507 Electrical Characteristics TJ = 25 Parameter Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 300 s; duty cycle Testconditons Symbol Min Typ Max TJ = 25 , IS = 1.7A, VGS = 0V*1 N-Ch 1.2 TJ = 25 , IS = -1.2A, VGS = 0V*1 P-Ch -1.2 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ s*1 P-Channel TJ=25 , IF=-1.2A,di/dt=-100A/ s*1 N-Ch 39 59 P-Ch 52 78 N-Ch 37 56 P-Ch 63 95 Unit V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3