Transistors IC IC SMD Type Product specification KRF7509 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 30 -30 V Continuous Drain Current, VGS @ 10V @ Ta = 25 ID 2.7 -2 Continuous Drain Current, VGS @ 10V @ Ta = 70 ID 2.1 -1.6 Pulsed Drain Current *1 IDM 21 -16 Drain-Source Voltage Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 1.25 PD W 0.8 10 Linear Derating Factor Gate-to-Source Voltage m W/ 20 VGS V Gate-to-Source Voltage Single Pulse tp<10 S VGSM 30 Peak Diode Recovery dv/dt *2 dv/dt 5.0 TJ, TSTG -55 to + 150 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 R V/ns 100 JA A /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 1.7A, di/dt 120A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -1.2A, di/dt 160A/ s, VDD V(BR)DSS, TJ 150 *3 Surface mounted on FR-4 board, t http://www.twtysemi.com 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KRF7509 Electrical Characteristics TJ = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 30 VGS = 0V, ID = -250 A P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.059 TJ ID = -1mA,Reference to 25 P-Ch 0.039 V(BR)DSS RDS(on) Gate Threshold Voltage VGS(th) gfs Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time VGS =10V, ID = 1.7A*1 VGS = 4.5V, ID = 0.85A*1 VGS = -10V, ID = -1.2A*1 VGS = -4.5V, ID = -0.6A*1 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Body Diode) Body Diode) *2 http://www.twtysemi.com Max V/ 0.09 0.110 0.14 0.175 P-Ch VDS = VGS, ID = 250 A N-Ch 1.0 P-Ch -1.0 VDS = 10V, ID = 0.85A*1 N-Ch 1.9 VDS = -10V, ID = -0.6A*1 P-Ch 0.92 VDS = 24V, VGS = 0V N-Ch 0.17 0.20 0.30 0.40 V S VDS = -24V, VGS = 0V P-Ch 1.0 VDS = 24V, VGS = 0V, TJ = 125 N-Ch -1.0 VDS = -24V, VGS = 0V, TJ = 125 P-Ch 25 N-Ch -25 VGS = 20V P-Ch N-Ch 7.8 12 ID = 1.7A,VDS = 24V,VGS =10V P-Ch 7.5 11 N-Ch 1.2 1.8 P-Channel P-Ch 1.3 1.9 ID = -1.2A,VDS = -24V,VGS = -10V N-Ch 2.5 3.8 P-Ch 2.5 3.7 N-Channel N-Ch 4.7 VDD = 15V,ID = 1.7A,RG = 6.1 P-Ch 9.7 RD=8.7 N-Ch 10 P-Channel P-Ch 12 VDD = -15V,ID = -1.2A,RG = 6.2 N-Ch 12 P-Ch 19 N-Ch 5.3 P-Ch 9.3 N-Channel N-Ch 210 VGS = 0V,VDS = 25V,f = 1.0MHz P-Ch 180 N-Ch 80 P-Channel P-Ch 87 VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch 32 P-Ch 42 IS ISM [email protected] nC ns pF N-Ch 1.25 P-Ch -1.25 N-Ch 21 P-Ch -16 4008-318-123 A 100 N-Channel RD=12 Unit V N-Ch VDS = VGS, ID = -250 A tf Continuous Source Current Typ N-Ch RDS(on) Forward Transconductance Min VGS = 0V, ID = 250 A Static Drain-to-Source On-Resistance Pulsed Source Current Testconditons Symbol A 2 of 3 IC Transistors IC SMD Type Product specification KRF7509 Electrical Characteristics TJ = 25 Parameter Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 300 s; duty cycle Testconditons Symbol Min Typ Max TJ = 25 , IS = 1.7A, VGS = 0V*1 N-Ch 1.2 TJ = 25 , IS = -1.8A, VGS = 0V*1 P-Ch -1.2 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ s*1 P-Channel TJ=25 , IF=-1.2A,di/dt=-100A/ s*1 N-Ch 40 60 P-Ch 30 45 N-Ch 48 72 P-Ch 37 55 Unit V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3