Transistors IC IC IC IC SMD SMD Type Type Product specification KRF9952 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1 : Source1 5 : Drain2 2 : Gate1 6 : Drain2 3 : Source2 7 : Drain1 4 : Gate2 8 : Drain1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-to-Source Voltage VGS N-Channel P-Channel 30 V 20 V Continuous Drain Current, VGS @ 10V @ Ta = 25 ID 3.5 -2.3 Continuous Drain Current, VGS @ 10V @ Ta = 70 ID 2.8 -1.8 Pulsed Drain Current *1 IDM 16 -10 IS 1.7 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 Single Pulse Avalanche Energy 44 Avalanche Current IAR 2.0 Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt R 57 -1.3 0.25 A mJ A mJ 5.0 -5 V/ns -55 to + 150 TJ, TSTG Maximum Junction-to-Ambient *3 A W 1.3 EAS Junction and Storage Temperature Range -1.3 2 PD Unit 62.5 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 2.0A, di/dt P-Channel ISD -1.3A, di/dt 100A/ 84A/ *3 Surface mounted on FR-4 board, t http://www.twtysemi.com s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF9952 Electrical Characteristics Ta = 25 Parameter Testconditons Symbol Drain-to-Source Breakdown Voltage 30 VGS = 0V, ID = -250 A P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.015 TJ ID = -1mA,Reference to 25 P-Ch 0.015 Static Drain-to-Source On-Resistance RDS(on) Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage VGS(th) gfs Forward Transconductance Drain-to-Source Leakage Current IDSS VGS =10V, ID = 2.2A*1 VGS = 4.5V, ID = 1.0A*1 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.5A*1 IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Continuous Source Current Pulsed Source Current Body Diode) Body Diode) *2 http://www.twtysemi.com V/ 0.08 0.10 0.12 0.15 0.165 0.250 P-Ch 0.290 0.400 N-Ch 1.0 P-Ch -1.0 VDS = 15V, ID = 3.5A*1 N-Ch 12 VDS = -15V, ID = -2.3A*1 P-Ch 2.4 VDS = 24V, VGS = 0V N-Ch 2.0 VDS = -24V, VGS = 0V P-Ch -2.0 VDS = 24V, VGS = 0V, TJ = 125 N-Ch 25 P-Ch -25 VGS = 20V V N-Ch S 100 P-Ch N-Channel N-Ch 6.9 ID = 1.8A,VDS = 10V,VGS =10V P-Ch 6.1 12 N-Ch 1.0 2.0 P-Channel P-Ch 1.7 3.4 ID = -2.3A,VDS = -10V,VGS = -10V N-Ch 1.8 3.5 P-Ch 1.1 2.2 N-Ch 6.2 12 19 N-Channel VDD = 10V,ID = 1.0A,RG = 6.0 P-Ch 9.7 RD=10 N-Ch 8.8 18 P-Channel P-Ch 14 28 VDD = -10V,ID = -1.0A,RG = 6.0 N-Ch 13 26 P-Ch 20 40 N-Ch 3.0 6.0 P-Ch 6.9 14 N-Channel N-Ch 190 VGS = 0V,VDS = 15V,f = 1.0MHz P-Ch 190 RD=10 N-Ch 120 P-Channel P-Ch 110 VGS = 0V,VDS = -15V,f = 1.0MHz N-Ch 61 P-Ch 54 IS ISM [email protected] Unit V VDS = VGS, ID = -250 A tf Input Capacitance N-Ch Max VDS = VGS, ID = 250 A VDS = -24V, VGS = 0V, TJ = 125 Gate-to-Source Forward Leakage Typ N-Ch V(BR)DSS Breakdown Voltage Temp. Coefficient Min VGS = 0V, ID = 250 A nA nC ns pF N-Ch 1.7 P-Ch -1.3 N-Ch 16 P-Ch 16 4008-318-123 A A 2 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF9952 Electrical Characteristics Ta = 25 Parameter Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 300 s; duty cycle Testconditons Symbol Typ Max TJ = 25 , IS = 1.25A, VGS = 0V*3 N-Ch Min 0.82 1.2 TJ = 25 , IS = -1.25A, VGS = 0V*3 P-Ch -0.82 -1.2 N-Channel TJ = 25 , IF =1.25A,di/dt = 100A/ N-Ch 27 53 s*1 P-Ch 27 54 N-Ch 28 57 P-Ch 31 62 P-Channel TJ=25 , IF=-1.25A,di/dt=-100A/ s*1 Unit V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. *3 N-Channel Starting TJ = 25 , L = 22mH RG = 25 , IAS = 2.0A. P-Channel Starting TJ = 25 , L = 67mH RG = 25 , IAS = -1.3A. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3