IC
IC
SMD Type
HEXFET Power MOSFET
KRF7750
TSSOP-8
Unit: mm
Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (
1.1mm)
Available in Tape & Reel
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain- Source Voltage
Symbol
Rating
Unit
VDS
-20
V
Continuous Drain Current, VGS @ -4.5V @ TC = 25
ID
4.7
Continuous Drain Current, VGS @ -4.5V @ TC = 70
ID
3.8
Pulsed Drain Current *1
IDM
38
A
Power Dissipation *2
@TC= 25
PD
1.0
W
Power Dissipation *2
@TC = 70
PD
0.64
W
0.008
W/
12
V
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
VGS
TJ, TSTG
R
JA
-55 to + 150
125
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board, t
10 sec
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1
IC
IC
SMD Type
KRF7750
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -250 A
Min
V/
VGS = -4.5V, ID = -4.7A*1
0.030
0.055
gfs
VDS = -10V, ID = -4.7A*1
11
-1.2
VDS = -20V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 70
-25
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = -4.7A
26
39
Qgs
VDS = -16V
3.9
5.8
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -5.0V
8.0
12
Turn-On Delay Time
td(on)
VDD = -10V
15
ID = -1.0A
54
td(off)
RD = 10
180
tr
Turn-Off Delay Time
tf
RG = 24
210
Input Capacitance
Ciss
VGS = 0V
1700
Output Capacitance
Coss
VDS = -15V
380
Reverse Transfer Capacitance
Crss
f = 1.0MHz
270
Fall Time
Continuous Source Current
Body Diode)
V
S
Gate-to-Source Charge
Rise Time
Unit
V
VGS = -2.5V, ID = -3.8A*1
-0.45
Gate-to-Source Reverse Leakage
Max
0.012
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
IGSS
Typ
-20
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
A
nA
nC
ns
pF
IS
-1.0
ISM
-38
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25 , IF =-1.0A
Reverse RecoveryCharge
Qrr
di/dt = -100A/
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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-1.2
V
26
39
ns
16
24
nC
TJ = 25 , IS = -1.0A, VGS = 0V*1
s*1