IC
IC
SMD Type
HEXFET Power MOSFET
KRF7756
TSSOP-8
Features
Unit: mm
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (
1.2mm)
Available in Tape & Reel
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain- Source Voltage
Symbol
Rating
Unit
VDS
-12
V
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
-4.3
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
-3.5
Pulsed Drain Current *1
IDM
-17
A
Power Dissipation *2
@TA= 25
PD
1.0
W
Power Dissipation *2
@TA = 70
PD
0.64
W
Linear Derating Factor
8
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
TJ, TSTG
R
JA
8
m W/
V
-55 to + 150
125
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board,
10sec
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1
IC
IC
SMD Type
KRF7756
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS = 0V, ID = -250 A
Min
V/
0.040
VGS = -2.5V, ID = -3.4A*1
0.058
VGS = -1.8V, ID = -2.2A*1
0.087
gfs
VDS = -10V, ID = -4.3A*1
13
-0.9
VDS = -9.6V, VGS = 0V
-1.0
VDS = -9.6V, VGS = 0V, TJ = 70
-25
VGS = -8.0V
-100
VGS = 8.0V
100
Qg
ID = -4.3A
12
18
Gate-to-Source Charge
Qgs
VDS = -6.0V
1.8
2.7
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V
2.9
4.4
Turn-On Delay Time
td(on)
VDD = -6V
12
tr
ID = -1.0A
18
RD = 6
160
VGS = -4.5V
170
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
VGS = 0V
1400
Output Capacitance
Coss
VDS = -10V
310
Reverse Transfer Capacitance
Crss
f = 1.0MHz
240
Continuous Source Current
Body Diode)
V
S
Total Gate Charge
Rise Time
Unit
V
VGS = -4.5V, ID = -4.3A*1
-0.4
Gate-to-Source Reverse Leakage
Max
-0.006
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
IGSS
Typ
-12
VGS(th)
IDSS
Gate-to-Source Forward Leakage
Testconditons
A
nA
nC
ns
pF
IS
-1.0
ISM
-17
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
400 s; duty cycle
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V
TJ = 25 , IF =-1.0A
35
53
ns
di/dt = -100A/
20
30
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
TJ = 25 , IS = -1.0A, VGS = 0V*1
s*1