IC
IC
SMD Type
HEXFET Power MOSFET
KRF7663
Features
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
-20
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-8.2
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-6.6
Pulsed Drain Current *1
IDM
-66
Drain-Source Voltage
Power Dissipation
@Ta= 25
Power Dissipation
@Ta= 70
PD
1.8
A
W
1.15
Linear Derating Factor
10
mW/
mJ
Single Pulse Avalanche Energy *2
EAS
115
Gate-to-Source Voltage
VGS
12
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R
JA
V
-55 to + 150
70
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A
*3 When mounted on 1 inch square copper board, t
10 sec
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IC
IC
SMD Type
KRF7663
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -250 A
Min
V/
0.02
VGS = -2.5V, ID = -5.1A*1
0.04
-0.60
VDS = -10V, ID = -7.0A*1
14.5
-1.2
VDS = -16V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 70
-25
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = -6.0A
30
45
Qgs
VDS = -10V
5.0
7.5
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -5V
7.0
10.5
Turn-On Delay Time
td(on)
Turn-Off Delay Time
VDD = -10V
11
tr
ID = -6A
100
td(off)
RG = 6.2
125
tf
RD=1.64
172
Input Capacitance
Ciss
VGS = 0V
2520
Output Capacitance
Coss
VDS = -10V
615
Reverse Transfer Capacitance
Crss
f = 1.0MHz
375
Fall Time
Continuous Source Current
Body Diode)
V
S
Gate-to-Source Charge
Rise Time
Unit
V
VGS = -4.5V, ID = -7.0A*1
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Max
-0.01
TJ ID = -1mA,Reference to 25
gfs
IGSS
Typ
-20
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
A
nA
nC
ns
pF
IS
-1.8
ISM
-66
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
-1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF =-2.5A
70
105
ns
Reverse RecoveryCharge
Qrr
di/dt = -100A/
50
75
*1 Pulse width
300 s; duty cycle
TJ = 25 , IS = -7A, VGS = 0V*1
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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s*1
C