Transistors
IC
SMD Type
HEXFET Power MOSFET
KRFR6215
TO-252
Features
Unit: mm
+0.1
2.30-0.1
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.8
0.50-0.7
+0.1
0.80-0.1
0.127
max
P-Channel
2.3
+0.28
1.50-0.1
Fast Switching
+0.1
0.60-0.1
+0.15
4.60-0.15
Fully Avalanche Rated
3.80
+0.25
2.65-0.1
Operating Temperature
+0.15
0.50-0.15
175
+0.2
9.70-0.2
Surface Mount
+0.15
5.55-0.15
Advanced Process Technology
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ 10V,Tc = 25
ID
-13
Continuous Drain Current, VGS @ 10V,Tc = 100
ID
-9
Pulsed Drain Current*1
IDM
-44
Power Dissipation TC = 25
PD
Linear Derating Factor
110
Unit
A
W
0.71
W/
20
V
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
310
mJ
Avalanche Current *1
IAR
-6.6
A
Repetitive Avalanche Energy
EAR
11
mJ
dv/dt
5
V/ns
TJ,TSTG
-55 to + 175
Peak Diode Recovery dv/dt *2
Operating Junction and Storage Temperature Range
Junction-to-Case
R
JC
1.4
/W
Junction-to-Ambient
R
Junction-to-Ambient
R
JA
50
/W
JA
110
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-6.6A, di/dt
-620A/
s, VDD
V(BR)DSS,TJ
175
*3 Starting TJ = 25 , L = 14mH,RG = 25 , IAS = -6.6A.
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1
Transistors
IC
SMD Type
KRFR6215
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gfs
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Total Gate Charge
Testconditons
VGS = 0V, ID =- 250 A
Min
Typ
Max
-150
V
-0.02
TJ ID = -1mA,Reference to 25
V/
VGS = -10V, ID = -6.6A*1
0.295
VGS = -10V, ID = -6.6A, TJ = 150 *1
0.58
VDS = VGS, ID = -250 A
-2.0
VDS = -50V, ID = -6.6A*1
3.6
-4.0
-25
VDS = -120V, VGS = 0V, TJ = 150
-250
VGS = 20V
100
VGS = -20V
-100
Qg
ID = -6.6A
66
Gate-to-Source Charge
Qgs
VDS = -120V
8.1
Qgd
VGS = -10V,*1
35
Turn-On Delay Time
td(on)
VDD = -75V
tr
Turn-Off Delay Time
td(off)
V
S
VDS = -150V, VGS = 0V
Gate-to-Drain ("Miller") Charge
Rise Time
Unit
A
nA
nC
14
ID = -6.6A
36
RG =6.8
53
RD =12 *1
37
ns
Fall Time
tf
Internal Drain Inductance
LD
4.5
nH
Internal Source Inductance
LS
7.5
nH
Input Capacitance
Ciss
VGS = 0V
860
Output Capacitance
Coss
VDS = -25V
220
Reverse Transfer Capacitance
Crss
f = 1.0MHz
130
Continuous Source Current
Body Diode)
pF
IS
-13
ISM
-44
A
Pulsed Source Current
Body Diode) *2
V
TJ = 25 , IF = -6.6A
240
ns
di/dt = 100A/
1.2
1.7
nC
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
-1.6
160
Diode Forward Voltage
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TJ = 25 , IS = -6.6A, VGS = 0V*1
s*1