Transistors
IC
SMD Type
HEXFET Power MOSFET
KRF2805S
TO-263
Features
Unit: mm
1 .2 7 -0+ 0.1.1
Advanced Process Technology
Ultra Low On-Resistance
+0.1
1.27-0.1
+0.2
4.57-0.2
Dynamic dv/dt Rating
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Repetitive Avalanche Allowed up to Tjmax
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
2 .5 4 -0+ 0.2.2
Fast Switching
1 5 .2 5 -0+ 0.2.2
5 .6 0
Operating Temperature
8 .7 -0+ 0.2.2
175
+0.1
5.08-0.1
+0.2
0.4-0.2
11gate
Gate
22drain
Drain
33source
Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ 10V,TC = 25
ID
135
Continuous Drain Current, VGS @ 10V,TC = 100
ID
96
Pulsed Drain Current
IDM
700
Power Dissipation TC = 25
PD
200
Linear Derating Factor
1.3
Gate-to-Source Voltage
VGS
20
380
Single Pulse Avalanche Energy
EAS
Avalanche Current*1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt*
Operating Junction and Storage Temperature Range
Fig.1.2
dv/dt
2
-55 to + 175
Junction-to-Case
R JC
0.75
R JA
40
104A, di/dt
240A/
s, VDD
W
W/
V
mJ
A
V/ns
300
Junction-to-Ambient (PCB mount)
* ISD
A
mJ
TJ,TSTG
Soldering Temperature, for 10 seconds
Unit
V(BR)DSS,TJ
Fig1. Unclamped Inductive Test Circuit
/W
175
Fig 2. Unclamped Inductive Waveforms
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1
Transistors
IC
SMD Type
KRF2805S
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Testconditons
VGS = 0V, ID = 250 A
Min
Static Drain-to-Source On-Resistance
RDS(on)
VGS = 10V, ID = 104A *
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
2.0
VDS = 25V, ID = 104A
91
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
TJ Reference to 25 , ID = 1mA
3.9
V/
4.7
4.0
VDS = 55V, VGS = 0V
20
VDS = 44V, VGS = 0V, TJ = 150
250
VGS = 20V
200
VGS = -20V
-200
Total Gate Charge
Qg
ID = 104A
150
230
Qgs
VDS = 44V
38
57
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 10V *
52
78
Turn-On Delay Time
td(on)
VDD = 28V
14
tr
ID = 104A
120
td(off)
RG = 2.5
68
VGS = 10V *
110
Turn-Off Delay Time
m
V
S
Gate-to-Source Charge
Rise Time
Unit
V
0.06
V(BR)DSS/
gfs
Max
55
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Typ
Fall Time
tf
Intermal Drain Inductance
LD
4.5
Internal Source Inductance
LS
7.5
A
nA
nC
ns
nH
Input Capacitance
Ciss
VGS = 0V
5110
Output Capacitance
Coss
VDS = 25V
1190
Reverse Transfer Capacitance
Crss
f = 1.0MHz
210
Output Capacitance
Coss
VGS = 0V, VDS = 1.0V, f = 1.0MHz
6470
Coss
VGS = 0V, VDS = 44V, f = 1.0MHz
860
VGS = 0V, VDS = 0V to 44V
1600
Output Capacitance
Effective Output Capacitance
Continuous Source Current
Coss eff.
Body Diode)
pF
IS
175
ISM
700
A
Pulsed Source Current
Body Diode)
Diode Forward Voltage
TJ = 25 , IS = 104A, VGS = 0V
1.3
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF = 104A
80
120
Reverse RecoveryCharge
Qrr
di/dt = 100A/
290
430
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Pulse width
2
VSD
400 s; duty cycle
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2%.
s*
C