Transistors
IC
SMD Type
HEXFET Power MOSFET
KRF1302S
1 .2 7 -0+ 0.1.1
TO-263
Features
Advanced Process Technology
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Operating Temperature
0.1max
+0.1
1.27-0.1
Repetitive Avalanche Allowed up to Tjmax
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
2 .5 4 -0+ 0.2.2
5 .2 8 -0+ 0.2.2
Fast Switching
1 5 .2 5 -0+ 0.2.2
175
8 .7 -0+ 0.2.2
Dynamic dv/dt Rating
5 .6 0
Ultra Low On-Resistance
+0.1
5.08-0.1
+0.2
0.4-0.2
11gate
Gate
22drain
Drain
33source
Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Continuous Drain Current, VGS @ 10V,TC = 25
Parameter
ID
174
Continuous Drain Current, VGS @ 10V,TC = 100
ID
120
Pulsed Drain Current
IDM
700
Power Dissipation TC = 25
PD
200
Linear Derating Factor
1.4
Gate-to-Source Voltage
VGS
20
Single Pulse Avalanche Energy
EAS
350
Avalanche Current*1
IAR
Fig.1.2
EAR
Peak Diode Recovery dv/dt
dv/dt
TBD
TJ,TSTG
-55 to + 175
Junction-to-Case
R JC
0.74
Junction-to-Ambient (PCB mount)
R JA
40
Soldering Temperature, for 10 seconds
Fig1. Unclamped Inductive Test Circuit
A
W
W/
V
mJ
A
mJ
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Unit
V/ns
300
/W
Fig 2. Unclamped Inductive Waveforms
www.kexin.com.cn
1
Transistors
IC
SMD Type
KRF1302S
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Testconditons
VGS = 0V, ID = 250µA
Min
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
VGS = 10V, ID = 104A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
2.0
VDS = 15V, ID = 104A
6.7
gfs
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IDSS
IGSS
Gate-to-Source Reverse Leakage
Max
20
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Typ
V
0.021
TJ Reference to 25 , ID = 1mA
3.3
V/
4.0
4.0
20
VDS = 16V, VGS = 0V, TJ = 150
250
VGS = 20V
200
VGS = -20V
-200
ID = 104A
79
120
Gate-to-Source Charge
Qgs
VDS = 16V
18
27
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 10V
31
46
Turn-On Delay Time
td(on)
VDD = 11V
28
tr
ID = 104A
130
td(off)
RG = 4.5
47
VGS = 10V
16
Rise Time
Turn-Off Delay Time
m
V
S
VDS = 20V, VGS = 0V
Qg
Total Gate Charge
Unit
Fall Time
tf
Intermal Drain Inductance
LD
4.5
Internal Source Inductance
LS
7.5
Input Capacitance
Ciss
VGS = 0V
3600
Output Capacitance
Coss
VDS = 25V
2370
A
nA
nC
ns
nH
Reverse Transfer Capacitance
Crss
f = 1.0MHz
520
Output Capacitance
Coss
VGS = 0V, VDS = 1.0V, f = 1.0MHz
5710
Output Capacitance
Coss
VGS = 0V, VDS = 16V, f = 1.0MHz
2370
VGS = 0V, VDS = 0V to 16V
3540
Effective Output Capacitance
Continuous Source Current
Coss eff.
Body Diode)
pF
IS
174
ISM
700
A
Pulsed Source Current
2
Body Diode)
1.3
V
66
100
ns
130
200
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25 , IF = 104A
Reverse RecoveryCharge
Qrr
di/dt = 100A/
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.kexin.com.cn
TJ = 25 , IS = 104A, VGS = 0V
s
C