Transistors
IC
SMD Type
HEXFET Power MOSFET
KRFR9310
TO-252
Features
Unit: mm
+0.1
2.30-0.1
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.8
0.50-0.7
P-Channel
0.127
max
2.3
Fully Avalanche Rated
+0.28
1.50-0.1
Avanced Process Technology
+0.1
0.60-0.1
+0.15
4.60-0.15
3.80
+0.15
5.55-0.15
+0.1
0.80-0.1
+0.25
2.65-0.1
+0.2
9.70-0.2
Fast Switching
+0.15
0.50-0.15
Surface Mount
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
-1.8
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
-1.1
Pulsed Drain Current*1
IDM
-7.2
Power Dissipation Tc = 25
PD
50
Linear Derating Factor
0.4
Unit
A
W
W/
V
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
92
mJ
Avalanche Current *1
IAR
-1.8
A
20
Repetitive Avalanche Energy *1
EAR
5
mJ
Peak Diode Recovery dv/dt *2
dv/dt
-24
V/ns
TJ,TSTG
-55 to + 150
Operating Junction and Storage Temperature Range
Junction-to-Case
R
JC
2.5
/W
Junction-to-Ambient
R
JA
50
/W
Junction-to-Ambient
R
JA
110
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-1.1A, di/dt
450A/
s, VDD
V(BR)DSS,TJ
150
*3 Starting TJ = 25 , L = 57 mH,RG = 25 , IAS = -1.8A.
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1
Transistors
IC
SMD Type
KRFR9310
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Testconditons
VGS = 0V, ID =- 250 A
Min
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 A
-2.0
gfs
VDS = -50V, ID = -1.1A*1
0.91
IDSS
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
TJ ID = -1mA,Reference to 25
VGS = -10V, ID = -1.1A*1
V/
7.0
-4.0
VDS = -400V, VGS = 0V
-100
VDS = -320V, VGS = 0V, TJ = 125
-500
VGS = 20V
-100
VGS = -20V
100
Total Gate Charge
Qg
ID = -1.1A
13
Qgs
VDS = -320V
3.2
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V,*1
5.0
Turn-On Delay Time
td(on)
VDD = -200V
11
ID = -1.1A
10
RG =21
25
RD =180 *1
24
tr
Turn-Off Delay Time
td(off)
V
S
Gate-to-Source Charge
Rise Time
Unit
V
-0.41
V(BR)DSS/
Drain-to-Source Leakage Current
Max
-400
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Typ
A
nA
nC
ns
Fall Time
tf
Internal Drain Inductance
LD
4.5
nH
Internal Source Inductance
LS
7.5
nH
Input Capacitance
Ciss
VGS = 0V
270
Output Capacitance
Coss
VDS = -25V
50
Reverse Transfer Capacitance
Crss
f = 1.0MHz
8.0
Continuous Source Current
Body Diode)
pF
IS
-1.8
ISM
-7.2
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
-4.0
V
Reverse Recovery Time
trr
TJ = 25 , IF = -1.1A
170
260
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
640
960
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25 , IS = -1.1A, VGS = 0V*1
s*1
C