Transistors SMD Type Epitaxial Planar NPN Transistor KTC4373 Features High Voltage: VCEO=120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colletor-Base Voltage VCBO 120 V Colletor-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA PC 500 mW PC* 1 W Tj 150 Tstg -55 to 150 Colletor Power Dissipation Junction Temperature Storage Temperature Range 2 * mounted on ceramic substrate (250mm X0.8t) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB=120V,IE=0 100 nA Emitter-Cut-off Current IEBO VEB=5V,IC=0 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA,IB=0 120 V Collector-Base Breakdown Voltage V(BR)EBO IE=1mA,.IC=0 5 V 80 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Colletor Output Capacitance hFE VCE=5V,IC=100mA VCE(sat) IC=500mA,IB=50mA 1.0 V VBE VCE=5V,IC=500mA 1.0 V fT VCE=5V,IC=100mA Cob VCB=10V,IE=0,f=1MHz 240 120 MHz 30 pF hFE Classification Marking CO CY Rank O Y Type 80 160 120 240 www.kexin.com.cn 1