IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS(on) in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage ID TA = 85 t 5 IDM Drain current Pulsed t = 10 s *1 Total power dissipation PD t 5 Operating and Storage Temperature Range Lead Temperature for Soldering Purposes Steady State t V 2.9 -2.2 2.1 -1.6 3.9 -3 12 -9 A A 1.1 W 2.1 W TJ, Tstg -55 to 150 TL 260 R Unit V 12 VGSS Drain current Continuous *1 TA = 25 P-Channel 20 VDSS Gate-source voltage Junction-to-Ambient *1 N-Channel 110 JA 5 60 /W *1 Surface Mounted on FR4 board using 1 in sq pad size www.kexin.com.cn 1 IC IC SMD Type KTHC5513 Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Testconditons Symbol V(BR) DSS ID=250 A,VGS=0V N-Ch 20 ID=-250 A,VGS=0V P-Ch -20 VDS=16V,VGS=0V Zero gate voltage drain current IDSS VDS=16V,VGS=0V,TJ = 85 VDS=-16V,VGS=0V VDS=-16V,VGS=0V,TJ = 85 Gate?to?Source Leakage Current Gate threshold voltage *1 VGS (th) Static drain-source on-state resistance *1 RDS (on) Static drain-source on-state resistance *1 RDS (on) Forward Transconductance gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge QG(TOT) Gate?to?Source Gate Charge QGS Gate?to?Drain "Miller" Charge QGD Turn-on delay time td (on) Rise time Turn-off delay time *1 Fall time *1 Forward Voltage *1 2 IGSS www.kexin.com.cn tr td (off) tf VSD Min VDS = 0 V, VGS = 12 V Typ Max V 1 N-Ch 5 -1 P-Ch 100 P-Ch 100 N-Ch 0.6 1.2 VDS = VGS, ID = -250 A P-Ch -0.6 -1.2 N-Ch ID=2.3A,VGS=2.5V ID=-2.2A,VGS=-4.5V P-Ch ID=-1.7A,VGS=-2.5V 0.058 0.13 N-Ch 6.0 P-Ch 6.0 N-Channel N-Ch 180 VDS=10V,VGS=0V,f=1MHz P-Ch 185 N-Ch 80 P-Channel P-Ch 95 VDS=-10V,VGS=0V,f=1MHz N-Ch 25 P-Ch 30 0.08 0.155 S pF pF pF VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 2.6 4.0 VGS =-4.5 V, VDS = -10 V, ID =-2.2 A P-Ch 3.0 6.0 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 0.6 VGS =-4.5 V, VDS =-10 V, ID =-2.2 A P-Ch 0.5 VGS = 4.5 V, VDS = 10 V, ID = 2.9 A N-Ch 0.7 VGS =-4.5 V, VDS =-10 V, ID =-2.2 A P-Ch 0.9 ID=2.9A,VDD=16V N-Ch 5.0 10 ID=-2.2A,VDD=-16V P-Ch 7.0 12 N-Channel N-Ch 9 18 VGS=4.5V,RG=2.5 *2 P-Ch 13 25 N-Ch 10 20 P-Ch 33 50 N-Ch 3.0 6.0 P-Ch 27 40 IS=2.6 A,VGS=0V N-Ch 0.8 1.15 IS=-2.1 A,VGS=0 V P-Ch -0.8 -1.15 *2 V 0.200 0.240 ID=-2.2A,VDS=-10V VGS=-4.5V,,RG=2.5 nA 0.077 0.115 ID=2.9A,VDS=10V P-Channel A -5 N-Ch VDS = VGS, ID = 250 A ID=2.9A,VGS=4.5A Unit nC ns ns ns ns V IC IC SMD Type KTHC5513 Electrical Characteristics Ta = 25 Parameter Testconditons Symbol trr N-Channel Reverse Recovery Time ta tb VGS = 0 V,dIS/dt = 100 A/ P-Channel VGS = 0 V,dIS/dt = 100 A/ Reverse Recovery Storage Charge *1 Pulse Test: Pulse Width 250 s,IS=1.5 A s,IS=?1.5A QRR s, Duty Cycle Min Typ N-Ch 12.5 P-Ch 32 N-Ch 9 P-Ch 10 N-Ch 3.5 P-Ch 22 N-Ch 6 P-Ch 15 Max Unit ns C 2%. *2 Switching characteristics are independent of operating junction temperature. www.kexin.com.cn 3